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CGHV59350のメーカーはCreeです、この部品の機能は「GaN HEMT」です。 |
部品番号 | CGHV59350 |
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部品説明 | GaN HEMT | ||
メーカ | Cree | ||
ロゴ | |||
このページの下部にプレビューとCGHV59350ダウンロード(pdfファイル)リンクがあります。 Total 12 pages
PRELIMINARY
CGHV59350
350 W, 5200 - 5900 MHz, 50-Ohm Input/Output Matched, GaN HEMT for C-Band Radar Systems
Cree’s CGHV59350 is a gallium nitride (GaN) high electron mobility transistor (HEMT)
designed specifically with high efficiency, high gain and wide bandwidth capabilities,
which makes the CGHV59350 ideal for 5.2 - 5.9 GHz C-Band radar amplifier applications.
The transistor is supplied in a ceramic/metal flange package, type 440217 and 440218.
Package
Type:
PN:
440217
CGHV59350
and 440218
Typical Performance Over 5.2 - 5.9 GHz (TC = 25˚C) of Demonstration Amplifier
Parameter
5.2 GHz
5.55 GHz
5.9 GHz
Output Power
440 445 490
Gain
10.5
10.5
11
Drain Efficiency
59 54
Note:
Measured in the CGHV59350-TB under 100 μs pulse width, 10% duty cycle, PIN = 46 dBm
55
Units
W
dB
%
Features
• 5.2 - 5.9 GHz Operation
• 450 W Typical Output Power
• 10.5 dB Power Gain
• 55% Typical Drain Efficiency
• 50 Ohm Internally Matched
• <0.3 dB Pulsed Amplitude Droop
Subject to change without notice.
www.cree.com/rf
1
1 Page Electrical Characteristics Continued...
Characteristics
Symbol
Min.
Typ.
RF Characteristics3 (TC = 25˚C, F0 = 5.2 - 5.9 GHz unless otherwise noted)
Output Power at 5.2 GHz
POUT1 – 440
Output Power at 5.55 GHz
POUT2 – 445
Output Power at 5.9 GHz
POUT3 – 490
Gain at 5.2 GHz
GP1 – 10.5
Gain at 5.55 GHz
GP2 – 10.5
Gain at 5.9 GHz
GP3 – 11
Drain Efficiency at 5.2 GHz
DE1 – 59
Drain Efficiency at 5.55 GHz
DE2 – 54
Drain Efficiency at 5.9 GHz
DE3 – 55
Small Signal Gain
S21 – 15
Max.
–
–
–
–
–
–
–
–
–
–
Input Return Loss
S11 – -7 –
Output Return Loss
S22 – -11 –
Amplitude Droop
D – -0.3 –
Output Stress Match
VSWR
–
5:1
–
Notes:
3 Measured in CGHV59350-TB. Pulse Width = 100 μS, Duty Cycle = 10%.
Units Conditions
W VDD = 50 V, IDQ = 1 A, PIN = 46 dBm
W VDD = 50 V, IDQ = 1 A, PIN = 46 dBm
W VDD = 50 V, IDQ = 1 A, PIN = 46 dBm
dB VDD = 50 V, IDQ = 1 A, PIN = 46 dBm
dB VDD = 50 V, IDQ = 1 A, PIN = 46 dBm
dB VDD = 50 V, IDQ = 1 A, PIN = 46 dBm
% VDD = 50 V, IDQ = 1 A, PIN = 46 dBm
% VDD = 50 V, IDQ = 1 A, PIN = 46 dBm
% VDD = 50 V, IDQ = 1 A, PIN = 46 dBm
dB VDD = 50 V, IDQ = 1 A, PIN = -10 dBm
dB VDD = 50 V, IDQ = 1 A, PIN = -10 dBm
dB VDD = 50 V, IDQ = 1 A, PIN = -10 dBm
dB VDD = 50 V, IDQ = 1 A, PIN = 46 dBm
No damage at all phase angles,
Y
VDD = 50 V, IDQ = 1 A, PIN = 46 dBm Pulsed
Copyright © 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
3 CGHV59350 Rev 0.0 - PRELIMINARY
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
3Pages Typical Performance
Figure 5.O-uOtpuuttpPuotwPerovws.etrimves. Time
VVDDD=D 5=05V0,VP,INP=IN46= d46BmdB,mD,uDtyutCy yCcylcele==1100%%
57.1
57
56.9
25uS
56.8
50uS
56.7
100uS
56.6
300uS
56.5
56.4
500uS
56.3
56.2
56.1
56
55.9
55.8
55.7
55.6
55.5
-50 0 50 100 150 200 250 300 350 400 450 500 550
Time (uS)
Copyright © 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
6 CGHV59350 Rev 0.0 - PRELIMINARY
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
6 Page | |||
ページ | 合計 : 12 ページ | ||
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PDF ダウンロード | [ CGHV59350 データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
CGHV59350 | GaN HEMT | Cree |