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CGHV59350 の電気的特性と機能

CGHV59350のメーカーはCreeです、この部品の機能は「GaN HEMT」です。


製品の詳細 ( Datasheet PDF )

部品番号 CGHV59350
部品説明 GaN HEMT
メーカ Cree
ロゴ Cree ロゴ 




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CGHV59350 Datasheet, CGHV59350 PDF,ピン配置, 機能
PRELIMINARY
CGHV59350
350 W, 5200 - 5900 MHz, 50-Ohm Input/Output Matched, GaN HEMT for C-Band Radar Systems
Cree’s CGHV59350 is a gallium nitride (GaN) high electron mobility transistor (HEMT)
designed specifically with high efficiency, high gain and wide bandwidth capabilities,
which makes the CGHV59350 ideal for 5.2 - 5.9 GHz C-Band radar amplifier applications.
The transistor is supplied in a ceramic/metal flange package, type 440217 and 440218.
Package
Type:
PN:
440217
CGHV59350
and 440218
Typical Performance Over 5.2 - 5.9 GHz (TC = 25˚C) of Demonstration Amplifier
Parameter
5.2 GHz
5.55 GHz
5.9 GHz
Output Power
440 445 490
Gain
10.5
10.5
11
Drain Efficiency
59 54
Note:
Measured in the CGHV59350-TB under 100 μs pulse width, 10% duty cycle, PIN = 46 dBm
55
Units
W
dB
%
Features
• 5.2 - 5.9 GHz Operation
• 450 W Typical Output Power
• 10.5 dB Power Gain
• 55% Typical Drain Efficiency
• 50 Ohm Internally Matched
• <0.3 dB Pulsed Amplitude Droop
Subject to change without notice.
www.cree.com/rf
1

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CGHV59350 pdf, ピン配列
Electrical Characteristics Continued...
Characteristics
Symbol
Min.
Typ.
RF Characteristics3 (TC = 25˚C, F0 = 5.2 - 5.9 GHz unless otherwise noted)
Output Power at 5.2 GHz
POUT1 440
Output Power at 5.55 GHz
POUT2 445
Output Power at 5.9 GHz
POUT3 490
Gain at 5.2 GHz
GP1 10.5
Gain at 5.55 GHz
GP2 10.5
Gain at 5.9 GHz
GP3 11
Drain Efficiency at 5.2 GHz
DE1 – 59
Drain Efficiency at 5.55 GHz
DE2 54
Drain Efficiency at 5.9 GHz
DE3 – 55
Small Signal Gain
S21 15
Max.
Input Return Loss
S11 -7
Output Return Loss
S22 -11
Amplitude Droop
D -0.3
Output Stress Match
VSWR
5:1
Notes:
3 Measured in CGHV59350-TB. Pulse Width = 100 μS, Duty Cycle = 10%.
Units Conditions
W VDD = 50 V, IDQ = 1 A, PIN = 46 dBm
W VDD = 50 V, IDQ = 1 A, PIN = 46 dBm
W VDD = 50 V, IDQ = 1 A, PIN = 46 dBm
dB VDD = 50 V, IDQ = 1 A, PIN = 46 dBm
dB VDD = 50 V, IDQ = 1 A, PIN = 46 dBm
dB VDD = 50 V, IDQ = 1 A, PIN = 46 dBm
% VDD = 50 V, IDQ = 1 A, PIN = 46 dBm
% VDD = 50 V, IDQ = 1 A, PIN = 46 dBm
% VDD = 50 V, IDQ = 1 A, PIN = 46 dBm
dB VDD = 50 V, IDQ = 1 A, PIN = -10 dBm
dB VDD = 50 V, IDQ = 1 A, PIN = -10 dBm
dB VDD = 50 V, IDQ = 1 A, PIN = -10 dBm
dB VDD = 50 V, IDQ = 1 A, PIN = 46 dBm
No damage at all phase angles,
Y
VDD = 50 V, IDQ = 1 A, PIN = 46 dBm Pulsed
Copyright © 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
3 CGHV59350 Rev 0.0 - PRELIMINARY
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf


3Pages


CGHV59350 電子部品, 半導体
Typical Performance
Figure 5.O-uOtpuuttpPuotwPerovws.etrimves. Time
VVDDD=D 5=05V0,VP,INP=IN46= d46BmdB,mD,uDtyutCy yCcylcele==1100%%
57.1
57
56.9
25uS
56.8
50uS
56.7
100uS
56.6
300uS
56.5
56.4
500uS
56.3
56.2
56.1
56
55.9
55.8
55.7
55.6
55.5
-50 0 50 100 150 200 250 300 350 400 450 500 550
Time (uS)
Copyright © 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
6 CGHV59350 Rev 0.0 - PRELIMINARY
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf

6 Page



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部品番号部品説明メーカ
CGHV59350

GaN HEMT

Cree
Cree


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