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1N5402GのメーカーはTaiwan Semiconductorです、この部品の機能は「Glass Passivated Rectifiers」です。 |
部品番号 | 1N5402G |
| |
部品説明 | Glass Passivated Rectifiers | ||
メーカ | Taiwan Semiconductor | ||
ロゴ | |||
このページの下部にプレビューと1N5402Gダウンロード(pdfファイル)リンクがあります。 Total 4 pages
CREAT BY ART
Glass Passivated Rectifiers
FEATURES
- Glass passivated chip junction
- High current capability, Low VF
- High reliability
- High surge current capability
- Low power loss, high efficiency
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
1N5400G thru 1N5408G
Taiwan Semiconductor
MECHANICAL DATA
Case: DO-201AD
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - green compound (halogen-free)
Base P/N with prefix "H" on packing code - AEC-Q101 qualified
Terminal: Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test
with prefix "H" on packing code meet JESD 201 class 2 whisker test
Weight: 1.2 g (approximately)
DO-201AD
MAXIMUM RATINGS AND ELECTRICAL CHARACTERSTICS (TA=25℃ unless otherwise noted)
PARAMETER
1N 1N 1N 1N 1N 1N 1N
SYMBOL
5400G 5401G 5402G 5404G 5406G 5407G 5408G
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
VRRM
VRMS
VDC
IF(AV)
50 100 200 400 600 800 1000
35 70 140 280 420 560 700
50 100 200 400 600 800 1000
3
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
IFSM
125
UNIT
V
V
V
A
A
Maximum instantaneous forward voltage (Note 1)
@3A
VF 1.1
1.0 V
Maximum reverse current @ rated VR
Typical junction capacitance (Note 2)
TJ=25 ℃
TJ=125 ℃
IR
Cj
Typical thermal resistance
RθjC
RθjA
Operating junction temperature range
Storage temperature range
Note1: Pulse Test with PW=300μs, 1% Duty Cycle
TJ
TSTG
Note2: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C.
5
100
25
15
45
- 55 to +150
- 55 to +150
μA
pF
OC/W
OC
OC
Document Number: DS_D1405021
Version: H14
1 Page CREAT BY ART
1000
FIG. 4 TYPICAL JUNCTION CAPACITANCE
f=1.0MHz
Vslg=50mVp-p
100
1N5400G thru 1N5408G
Taiwan Semiconductor
10
1
10
REVERSE VOLTAGE (V)
PACKAGE OUTLINE DIMENSIONS
100
DIM.
A
B
C
D
E
Unit (mm)
Min Max
5.00 5.60
1.20
25.40
1.30
-
8.50 9.50
25.40
-
Unit (inch)
Min Max
0.197 0.220
0.048 0.052
1.000
-
0.335 0.375
1.000
-
MARKING DIAGRAM
P/N = Specific Device Code
G = Green Compound
YWW = Date Code
F = Factory Code
Document Number: DS_D1405021
Version: H14
3Pages | |||
ページ | 合計 : 4 ページ | ||
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PDF ダウンロード | [ 1N5402G データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
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