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PDF 1N5402G Data sheet ( Hoja de datos )
| Número de pieza | 1N5402G | |
| Descripción | SILICON RECTIFIER, 200V, 3A, DIODE | |
| Fabricantes | Shunye | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de 1N5402G (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
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1N5400G THRU 1N5408G
GLASS PASSIVATED SILICON RECTIFIER
Reverse Voltage - 50 to 1000 Volts Forward Current - 3.0 Amperes
DO-201AD
0.220 (5.6)
0.197(5.0)
DIA.
1.0 (25.4)
MIN.
0.375(9.5)
0.285(7.2)
FEATURES
The plastic package carries Underwriters Laboratory
Flammability Classification 94V-0
Construction utilizes void-free
molded plastic technique
Low reverse leakage
High forward surge current capability
High temperature soldering guaranteed:
250 C/10 seconds,0.375”(9.5mm) lead length,
5 lbs. (2.3kg) tension
0.052 (1.3)
0.048 (1.2)
DIA.
1.0 (25.4)
MIN.
Dimensions in inches and (millimeters)
MECHANICAL DATA
Case: JEDEC DO-201AD molded plastic body
Terminals: Plated axial leads, solderable per MIL-STD-750,
Method 2026
Polarity: Color band denotes cathode end
Mounting Position: Any
Weight:0.04 ounce, 1.10 grams
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
0.375”(9.5mm) lead length at TA=75 C
Peak forward surge current
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method)
Maximum instantaneous forward voltage at 3.0A
Maximum DC reverse current TA=25 C
at rated DC blocking voltage TA=100 C
Typical junction capacitance (NOTE 1)
Typical thermal resistance (NOTE 2)
Operating junction and storage temperature range
SYMBOLS
1N
5400G
1N 1N 1N 1N 1N 1N 1N 1N
5401G 5402G 5403G 5404G 5405G 5406G 5407G 5408G
UNITS
VRRM
VRMS
VDC
50 100 200 300 400 500 600 800 1000 VOLTS
35 70 140 210 280 350 420 560 700 VOLTS
50 100 200 300 400 500 600 800 1000 VOLTS
I(AV) 3.0
Amps
IFSM
VF
IR
CJ
RθJA
TJ,TSTG
200
1.2
5.0
100
30.0
20.0
-65 to +175
Amps
Volts
µA
pF
C/W
C
Note:1.Measured at 1MHz and applied reverse voltage of 4.0V D.C.
2.Thermal resistance from junction to ambient at 0.375”(9.5mm)lead length,P.C.B. mounted
www.shunyegroup.com.cn
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet 1N5402G.PDF ] | |
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