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PDF UPA2454 Data sheet ( Hoja de datos )
| Número de pieza | UPA2454 | |
| Descripción | N-CHANNEL MOS FIELD EFFECT TRANSISTOR | |
| Fabricantes | Renesas | |
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
μ PA2454
N-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
DESCRIPTION
The μ PA2454 is a switching device which can be driven directly by
a 2.5 V power source.
This μ PA2454 features a low on-state resistance and excellent
switching characteristics, and is suitable for applications such as
power switch of portable machine and so on.
PACKAGE DRAWING (Unit: mm)
16
25
34
FEATURES
• 2.5 V drive available
• Low on-state resistance
RDS(on)1 = 10.0 mΩ TYP. (VGS = 4.5 V, ID = 4.0 A)
RDS(on)2 = 10.5 mΩ TYP. (VGS = 4.0 V, ID = 4.0 A)
RDS(on)3 = 13.0 mΩ TYP. (VGS = 3.1 V, ID = 4.0 A)
RDS(on)4 = 15.5 mΩ TYP. (VGS = 2.5 V, ID = 4.0 A)
• Built-in G-S protection diode against ESD
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
24.0
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC) Note1
Drain Current (pulse) Note2
Total Power Dissipation (2 units) Note1
Total Power Dissipation (2 units) Note3
VGSS
ID(DC)
ID(pulse)
PT1
PT2
±12.0
±15.0
±100
2.5
0.7
Channel Temperature
Tch 150
Storage Temperature
Tstg −55 to +150
V
V
A
A
W
W
°C
°C
4.4±0.1
5.0±0.1
7
(0.9)
(0.15)
(3.05)
Each lead has same dimensions
1,2: Source 1
5,6: Source 2
3: Gate 1
4: Gate 2
7: Drain
(0.50)
Notes 1. Mounted on ceramic substrate of 50 cm2 x 1.1 mm
2. PW ≤ 10 μs, Duty Cycle ≤ 1%
3. Mounted on FR-4 board of 50 cm2 x 1.6 mm
EQUIVALENT CIRCUIT
Drain1
Drain2
Remark The diode connected between the gate and source of the transistor serves as a
protector against ESD. When this device actually used, an additional protection
circuit is externally required if a voltage exceeding the rated voltage may be
applied to this device.
ORDERING INFORMATION
Gate1
Body
Diode Gate2
Body
Diode
Gate
Protection
Diode
Source1
Gate
Protection
Diode
Source2
PART NUMBER
μ PA2454TL-E1-ANote
μ PA2454TL-E2-ANote
LEAD PLATING
Sn-Bi
PACKING
Reel
3000 p/reel
PACKAGE
6PIN HWSON (4521)
Note Pb-free (This product does not contain Pb in the external electrode and other parts.)
The information in this document is subject to change without notice. Before using this document, please confirm that this is the
latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales
representative for availability and additional information.
Document No. G20063EJ1V1DS00 (1st edition)
Date Published March 2010 NS
Printed in Japan
2010
1 page  
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
25
20 VGS = 4.5 V
4.0 V
3.1 V
15 2.5 V
ID = 4.0 A
Pulsed
10
5
0
-50
0 50 100
Tch - Channel Temperature - °C
150
SWITCHING CHARACTERISTICS
100
10
1
0.1
100
tf
tr
td(off)
td(on)
VDD = 20.0 V
VGS = 4.0 V
RG = 6 Ω
1 10
ID - Drain Current - A
100
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
10
1
0.1
0.01
VGS = 0 V
Pulsed
0 0.5 1 1.5
VF(S-D) - Source to Drain Voltage - V
μ PA2454
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
10000
1000
Ciss
100
Coss
Crss
VGS = 0 V
f = 1.0 MHz
10
0.1 1
10 100
VDS - Drain to Source Voltage - V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
25 5
ID = 8.0 A
20 VDD = 20 V
12 V
5V
15
4
3
10 VGS 2
5 VDS 1
00
0 2 4 6 8 10 12 14
QG - Gate Charge - nC
Data Sheet G20063EJ1V1DS
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet UPA2454.PDF ] | |
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