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Número de pieza | IRF8113PBF-1 | |
Descripción | Power MOSFET ( Transistor ) | |
Fabricantes | International Rectifier | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de IRF8113PBF-1 (archivo pdf) en la parte inferior de esta página. Total 10 Páginas | ||
No Preview Available ! VDS
RDS(on) max
(@VGS = 10V)
RDS(on) max
(@VGS = 4.5V)
Qg (typical)
ID
(@TA = 25°C)
30
5.6
6.8
24
17.2
V
mΩ
nC
A
Features
Industry-standard pinout SO-8 Package
Compatible with Existing Surface Mount Techniques
RoHS Compliant, Halogen-Free
MSL1, Industrial qualification
IRF8113PbF-1
HEXFET® Power MOSFET
S1
S2
AA
8D
7D
S3
G4
6D
5D
Top View
SO-8
Benefits
⇒ Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Base Part Number Package Type
IRF8113PbF-1
SO-8
Standard Pack
Form
Quantity
Tube/Bulk
95
Tape and Reel
4000
Orderable Part Number
IRF8113PbF-1
IRF8113TRPbF-1
Absolute Maximum Ratings
Parameter
VDS Drain-to-Source Voltage
VGS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
cPulsed Drain Current
fPower Dissipation
fPower Dissipation
TJ
TSTG
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Thermal Resistance
Parameter
gRθJL Junction-to-Drain Lead
fgRθJA Junction-to-Ambient
Notes through
are on page 10
Max.
30
± 20
17.2
13.8
135
2.5
1.6
0.02
-55 to + 150
Units
V
A
W
W/°C
°C
Typ.
–––
–––
Max.
20
50
Units
°C/W
1 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback
June 23, 2014
1 page IRF8113PbF-1
18
16
14
12
10
8
6
4
2
0
25
50 75 100 125
TJ , Junction Temperature (°C)
150
2.2
2.0
1.8
ID = 250μA
1.6
1.4
1.2
1.0
0.8
-75 -50 -25 0 25 50 75 100 125 150
TJ , Temperature ( °C )
Fig 9. Maximum Drain Current Vs.
Case Temperature
Fig 10. Threshold Voltage Vs. Temperature
100
D = 0.50
10 0.20
0.10
0.05
1 0.02
0.01
0.1
0.01
0.001
1E-006
SINGLE PULSE
( THERMAL RESPONSE )
1E-005
0.0001
0.001
τJ τJ
τ1 τ1
R1R1
CiC= iτi/Ri/iRi
R2R2
τ2 τ2
R3R3
R4R4
τCτ
Ri (°C/W)
0.924
13.395
τi (sec)
0.000228
0.1728
τ3 τ3
τ4 τ4
22.046 1.5543
14.911 22.5
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
0.01 0.1 1 10 100
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
5 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback
June 23, 2014
5 Page |
Páginas | Total 10 Páginas | |
PDF Descargar | [ Datasheet IRF8113PBF-1.PDF ] |
Número de pieza | Descripción | Fabricantes |
IRF8113PBF-1 | Power MOSFET ( Transistor ) | International Rectifier |
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