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Número de pieza | IRF7832PBF-1 | |
Descripción | Power MOSFET ( Transistor ) | |
Fabricantes | International Rectifier | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de IRF7832PBF-1 (archivo pdf) en la parte inferior de esta página. Total 10 Páginas | ||
No Preview Available ! VDS
RDS(on) max
(@VGS = 10V)
Qg (typical)
ID
(@TA = 25°C)
30 V
4.0 mΩ
34 nC
20 A
IRF7832PbF-1
HEXFET® Power MOSFET
S1
AA
8D
S2
7D
S3
6D
G4
5D
Top View
SO-8
Applications
l Synchronous MOSFET for Notebook Processor Power
l Synchronous Rectifier MOSFET for Isolated DC-DC Converters in Networking Systems
Features
Industry-standard pinout SO-8 Package
Compatible with Existing Surface Mount Techniques
RoHS Compliant, Halogen-Free
MSL1, Industrial qualification
Benefits
⇒ Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Base Part Number Package Type
IRF7832PbF-1
SO-8
Standard Pack
Form
Quantity
Tube/Bulk
95
Tape and Reel
4000
Orderable Part Number
IRF7832PbF-1
IRF7832TRPbF-1
Absolute Maximum Ratings
Parameter
VDS Drain-to-Source Voltage
VGS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
cContinuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
TJ
TSTG
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Thermal Resistance
Parameter
fRθJL Junction-to-Drain Lead
RθJA Junction-to-Ambient
Notes through are on page 10
Max.
30
± 20
20
16
160
2.5
1.6
0.02
-55 to + 155
Units
V
A
W
W/°C
°C
Typ.
–––
–––
Max.
20
50
Units
°C/W
1 www.irf.com © 2013 International Rectifier Submit Datasheet Feedback
November 22, 2013
1 page IRF7832PbF-1
24
20
16
12
8
4
0
25
50 75 100 125
TC , Case Temperature (°C)
150
Fig 9. Maximum Drain Current Vs.
Case Temperature
2.5
2.0
1.5 ID = 250μA
1.0
0.5
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Temperature (°C)
Fig 10. Threshold Voltage Vs. Temperature
100
D = 0.50
10 0.20
0.10
0.05
1 0.02
0.01
0.1
0.01
1E-006
1E-005
SINGLE PULSE
( THERMAL RESPONSE )
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
1
10
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
100
5 www.irf.com © 2013 International Rectifier Submit Datasheet Feedback
November 22, 2013
5 Page |
Páginas | Total 10 Páginas | |
PDF Descargar | [ Datasheet IRF7832PBF-1.PDF ] |
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IRF7832PBF-1 | Power MOSFET ( Transistor ) | International Rectifier |
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