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PDF IRF7799L2PBF Data sheet ( Hoja de datos )
| Número de pieza | IRF7799L2PBF | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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IRF7799L2PbF
l RoHS Compliant, Halogen Free
l Lead-Free (Qualified up to 260°C Reflow)
l Ideal for High Performance Isolated Converter
Primary Switch Socket
l Optimized for Synchronous Rectification
l Low Conduction Losses
l High Cdv/dt Immunity
l Low Profile (<0.7mm)
l Dual Sided Cooling Compatible
l Compatible with existing Surface Mount Techniques
l Industrial Qualified
Applicable DirectFET Outline and Substrate Outline
DirectFET Power MOSFET
Typical values (unless otherwise specified)
VDSS
VGS
250V min ± 30V max
Qg tot
Qgd
110nC
39nC
RDS(on)
32mΩ@ 10V
Vgs(th)
4.0V
S
S
D GS
S
S
S
SD
S
L8
DirectFET ISOMETRIC
SB SC
M2 M4
L4 L6 L8
Description
The IRF7799L2TR/TR1PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the
lowest on-state resistance in a package that has a footprint smaller than a D2PAK and only 0.7 mm profile. The DirectFET package is compatible with existing
layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application
note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer
in power systems.
The IRF7799L2TR/TR1PbF is optimized for high frequency switching and synchronous rectification applications. The reduced total losses in the device
coupled with the high level of thermal performance enables high efficiency and low temperatures, which are key for system reliability improvements, and
makes this device ideal for high performance power converters.
Orderable part number
Package Type
Standard Pack
Form
Quantity
IRF7799L2TRPbF
DirectFET2 Large Can
Tape and Reel
4000
IRF7799L2TR1PbF
DirectFET2 Large Can
Tape and Reel
1000
Absolute Maximum Ratings
Parameter
VDS
VGS
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TA = 25°C
ID @ TC = 25°C
IDM
EAS
IAR
200
Drain-to-Source Voltage
Gate-to-Source Voltage
fContinuous Drain Current, VGS @ 10V (Silicon Limited)
fContinuous Drain Current, VGS @ 10V (Silicon Limited)
eContinuous Drain Current, VGS @ 10V (Silicon Limited)
fContinuous Drain Current, VGS @ 10V (Package Limited)
gPulsed Drain Current
hSingle Pulse Avalanche Energy
ÃgAvalanche Current
60
180 ID = 21A
160
140
55 Vgs = 7.0V
Vgs = 8.0V
50
Vgs = 10V
Vgs = 15V
120 45
Note
"TR" suffix
"TR1" suffix EOL notice # 264
Max.
250
±30
35
25
6.6
375
140
325
21
Units
V
A
mJ
A
TJ = 25°C
100 40
80
60
40
20
4
TJ = 125°C
TJ = 25°C
8 12 16 20
35
30
25
0
20 40 60 80 100
VGS, Gate -to -Source Voltage (V)
Fig 1. Typical On-Resistance vs. Gate Voltage
Notes:
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET Website.
Surface mounted on 1 in. square Cu board, steady state.
ID, Drain Current (A)
Fig 2. Typical On-Resistance vs. Drain Current
TC measured with thermocouple mounted to top (Drain) of part.
Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25°C, L = 1.42mH, RG = 25Ω, IAS = 21A.
Pulse width ≤ 400μs; duty cycle ≤ 2%.
1 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback
February 24, 2014
1 page  
IRF7799L2PbF
1000
100
10
TJ = 175°C
TJ = 25°C
TJ = -40°C
1
VGS = 0V
0.1
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
1
VSD, Source-to-Drain Voltage (V)
Fig 10. Typical Source-Drain Diode Forward Voltage
40
1000
100
OPERATION IN THIS AREA
LIMITED BY R DS(on)
10
DC
100μsec
1msec
1 10msec
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
1 10
100 1000
VDS, Drain-to-Source Voltage (V)
Fig11. Maximum Safe Operating Area
6.0
5.0
30
4.0
20
3.0
ID = 250μA
10
ID = 1.0mA
2.0 ID = 1.0A
0
25
50 75 100 125 150
TC , Case Temperature (°C)
175
Fig 12. Maximum Drain Current vs. Case Temperature
1400
1200
1000
1.0
-75 -50 -25 0 25 50 75 100 125 150 175
TJ , Temperature ( °C )
Fig 13. Typical Threshold Voltage vs.
Junction Temperature
ID
TOP
1.33A
2.53A
BOTTOM 21A
800
600
400
200
0
25 50 75 100 125 150 175
Starting TJ , Junction Temperature (°C)
Fig 14. Maximum Avalanche Energy Vs. Drain Current
5 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback
February 24, 2014
5 Page 
IRF7799L2PbF
Qualification Information†
Qualification level
Industrial ††
(per JEDEC JESD47F††† guidelines)
Comments: This family of products has passed JEDEC’s Industrial
qualification. IR’s Consumer qualification level is granted by extension of the
higher Industrial level.
Moisture Sensitivity Level
RoHS Compliant
DFET2
MSL1
(per JEDEC J-STD-020D†††)
Yes
Qualification standards can be found at International Rectifier’s web site
http://www.irf.com/product-info/reliability
Higher qualification ratings may be available should the user have such requirements.
Please contact your International Rectifier sales representative for further information:
http://www.irf.com/whoto-call/salesrep/
Applicable version of JEDEC standard at the time of product release.
Revision History
Date
2/24/2014
Comments
• Updated ordering information to reflect the End-Of-life (EOL) of the mini-reel option (EOL notice #264)
• Updated data sheet with new IR corporate template
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visit http://www.irf.com/whoto-call/
11 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback
February 24, 2014
11 Page | ||
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