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PDF IRF7509PBF-1 Data sheet ( Hoja de datos )
| Número de pieza | IRF7509PBF-1 | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | International Rectifier | |
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VDS
RDS(on) max
(@VGS = 10V)
Qg (typical)
ID
(@TA = 25°C)
N-CH
30
0.11
7.8
2.7
P-CH
-30
0.2
7.5
-2.0
V
Ω
nC
A
IRF7509PbF-1
HEXFET® Power MOSFET
N-CHANNEL MOSFET
S1 1
8 D1
G1 2
7 D1
S2 3
6 D2
G2 4
5 D2
P-CHANNEL MOSFET
Top View
Micro8
Features
Industry-standard pinout Micro-8 Package
Compatible with Existing Surface Mount Techniques
RoHS Compliant, Halogen-Free
MSL1, Industrial qualification
Benefits
⇒ Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Base Part Number Package Type
IRF7509PbF-1
Micro-8
Standard Pack
Form
Quantity
Tube/Bulk
95
Tape and Reel
4000
Orderable Part Number
IRF7509PbF-1
IRF7509TRPbF-1
Absolute Maximum Ratings
Parameter
VDS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
VGS
VGSM
dv/dt
TJ , TSTG
Drain-Source Voltage
Continuous Drain Current, VGS
Continuous Drain Current, VGS
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Gate-to-Source Voltage Single Pulse tp<10μS
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
Parameter
RθJA
Maximum Junction-to-Ambient
Max.
N-Channel
P-Channel
30 -30
2.7 -2.0
2.1 -1.6
21 -16
1.25
0.8
10
± 20
30
5.0
-55 to + 150
240 (1.6mm from case)
Units
V
A
W
W
mW/°C
V
V
V/ns
°C
Max.
100
Units
°C/W
1 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback
June 27, 2014
1 page  
IRF7509PbF-1
10 VGS
TOP - 15V
- 10V
- 7.0V
- 5.5V
- 4.5V
- 4.0V
- 3.5V
BOTTOM - 3.0V
1
-3.0V
0.1
0.1
20μs PULSE WIDTH
TJ = 25°C
A
1 10
-VDS, Drain-to-Source Voltage (V)
Fig 11. Typical Output Characteristics
10
TJ = 25°C
TJ = 150°C
1
P - Channel
10 VGS
TOP - 15V
- 10V
- 7.0V
- 5.5V
- 4.5V
- 4.0V
- 3.5V
BOTTOM - 3.0V
1
-3.0V
0.1
0.1
20μs PULSE WIDTH
TJ = 150°C
A
1 10
-VDS, Drain-to-Source Voltage (V)
Fig 12. Typical Output Characteristics
10
TJ = 150°C
1
TJ = 25°C
VDS = -10V
20μs PULSE WIDTH
0.1
3.0
4.0
5.0
6.0
7.0A
-VGS , Gate-to-Source Voltage (V)
Fig 13. Typical Transfer Characteristics
2.0 ID = -1.2A
1.5
1.0
0.5
0.0
-60
VGS = -10V A
-40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
Fig 15. Normalized On-Resistance
Vs. Temperature
5 www.irf.com © 2014 International Rectifier
0.1
0.4
VGS = 0V A
0.6 0.8 1.0 1.2 1.4
-VSD , Source-to-Drain Voltage (V)
Fig 14. Typical Source-Drain Diode
Forward Voltage
1.5
1.0
VGS = -4.5V
0.5
VGS = -10V
0.0 A
01234
,-I , Drain Current (A)
Fig 16. Typical On-Resistance Vs. Drain
Current
Submit Datasheet Feedback
June 27, 2014
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet IRF7509PBF-1.PDF ] | |
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