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STP12N50M2のメーカーはSTMicroelectronicsです、この部品の機能は「N-channel Power MOSFET」です。 |
部品番号 | STP12N50M2 |
| |
部品説明 | N-channel Power MOSFET | ||
メーカ | STMicroelectronics | ||
ロゴ | |||
このページの下部にプレビューとSTP12N50M2ダウンロード(pdfファイル)リンクがあります。 Total 13 pages
STP12N50M2
N-channel 500 V, 0.325 Ω typ.,10 A MDmesh II Plus™ low Qg
Power MOSFET in a TO-220 package
Datasheet - preliminary data
7$%
72
Features
Order code
STP12N50M2
VDS
500 V
RDS(on) max ID
0.38 Ω 10 A
• Extremely low gate charge
• Lower RDS(on) x area vs previous generation
• Low gate input resistance
• 100% avalanche tested
• Zener-protected
Figure 1. Internal schematic diagram
, TAB
Applications
• Switching applications
Description
This device is an N-channel Power MOSFET
developed using a new generation of MDmesh™
technology: MDmesh II Plus™ low Qg. This
revolutionary Power MOSFET associates a
vertical structure to the company's strip layout to
yield one of the world's lowest on-resistance and
gate charge. It is therefore suitable for the most
demanding high efficiency converters.
AM15572v1
Order code
STP12N50M2
.
Table 1. Device summary
Marking
Package
12N50M2
TO-220
Packaging
Tube
June 2014
DocID026516 Rev 1
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
1/13
www.st.com
1 Page STP12N50M2
1 Electrical ratings
Electrical ratings
Symbol
Table 2. Absolute maximum ratings
Parameter
Value
VGS
ID
ID
(1)
IDM
PTOT
(2)
dv/dt
(3)
dv/dt
Gate-source voltage
Drain current (continuous) at TC = 25 °C
Drain current (continuous) at TC = 100 °C
Drain current (pulsed)
Total dissipation at TC = 25 °C
Peak diode recovery voltage slope
MOSFET dv/dt ruggedness
Tstg Storage temperature
Tj Max. operating junction temperature
1. Pulse width limited by safe operating area.
2. ISD ≤ 10 A, di/dt ≤ 400 A/μs; VDS peak < V(BR)DSS, VDD=400 V.
3. VDS ≤ 400 V
± 25
10
7
40
85
15
50
- 55 to 150
Symbol
Table 3. Thermal data
Parameter
Rthj-case Thermal resistance junction-case max
Rthj-amb Thermal resistance junction-amb max
Value
1.47
62.5
Symbol
Table 4. Avalanche characteristics
Parameter
Value
Avalanche current, repetitive or not
IAR repetitive (pulse width limited by Tjmax)
Single pulse avalanche energy
EAS (starting Tj=25°C, ID= IAR; VDD=50)
3.5
204
Unit
V
A
A
A
W
V/ns
V/ns
°C
Unit
°C/W
°C/W
Unit
A
mJ
DocID026516 Rev 1
3/13
13
3Pages Electrical characteristics
STP12N50M2
2.1 Electrical characteristics (curves)
Figure 2. Safe operating area
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Figure 3. Thermal impedance
V
V
PV
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PV
7F &
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Figure 4. Output characteristics
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Figure 5. Transfer characteristics
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9
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Figure 6. Gate charge vs gate-source voltage
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Figure 7. Static drain-source on-resistance
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6/13 DocID026516 Rev 1
6 Page | |||
ページ | 合計 : 13 ページ | ||
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PDF ダウンロード | [ STP12N50M2 データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
STP12N50M2 | N-channel Power MOSFET | STMicroelectronics |