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STP110N8F7 の電気的特性と機能

STP110N8F7のメーカーはSTMicroelectronicsです、この部品の機能は「N-channel Power MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 STP110N8F7
部品説明 N-channel Power MOSFET
メーカ STMicroelectronics
ロゴ STMicroelectronics ロゴ 




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STP110N8F7 Datasheet, STP110N8F7 PDF,ピン配置, 機能
STP110N8F7
N-channel 80 V, 6.4 mΩ typ., 80 A, STripFET™ F7
Power MOSFET in a TO-220 package
Datasheet - production data
Figure 1: Internal schematic diagram
Features
Order code
STP110N8F7
VDS
80 V
RDS(on)max
7.5 mΩ
ID
80 A
PTOT
170 W
Among the lowest RDS(on) on the market
Excellent figure of merit (FoM)
Low Crss/Ciss ratio for EMI immunity
High avalanche ruggedness
Applications
Switching applications
Description
This N-channel Power MOSFET utilizes
STripFET™ F7 technology with an enhanced
trench gate structure that results in very low on-
state resistance, while also reducing internal
capacitance and gate charge for faster and more
efficient switching.
Order code
STP110N8F7
Table 1: Device summary
Marking
Package
110N8F7
TO-220
Packaging
Tube
November 2015
DocID027154 Rev 2
This is information on a product in full production.
1/13
www.st.com

1 Page





STP110N8F7 pdf, ピン配列
STP110N8F7
1 Electrical ratings
Electrical ratings
Symbol
VDS
VGS
ID
ID
IDM(2)
PTOT
EAS(3)
TJ
Tstg
Table 2: Absolute maximum ratings
Parameter
Drain-source voltage
Gate-source voltage
Drain current (continuous) at TC = 25 °C
Drain current (continuous) at TC = 100 °C
Drain current (pulsed)
Total dissipation at TC = 25 °C
Single pulse avalanche energy
Operating junction temperature
Storage temperature
Notes:
(1)Limited by package
(2)Pulse width is limited by safe operating area
(3)Starting Tj = 25°C, Id = 25 A, Vdd = 40 V
Value
80
±20
80 (1)
76
320
170
220
-55 to 175
Unit
V
V
A
A
A
W
mJ
°C
°C
Symbol
Rthj-case
Rthj-amb
Table 3: Thermal data
Parameter
Thermal resistance junction-case max
Thermal resistance junction-ambient max
Value
0.88
62.5
Unit
°C/W
°C/W
DocID027154 Rev 2
3/13


3Pages


STP110N8F7 電子部品, 半導体
Electrical characteristics
2.2 Electrical characteristics (curves)
Figure 2: Safe operating area
STP110N8F7
Figure 3: Thermal impedance
Figure 4: Output characteristics
Figure 5: Transfer characteristics
Figure 6: Gate charge vs gate-source voltage Figure 7: Static drain-source on-resistance
6/13 DocID027154 Rev 2

6 Page



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部品番号部品説明メーカ
STP110N8F7

N-channel Power MOSFET

STMicroelectronics
STMicroelectronics


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