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PDF BS170F Data sheet ( Hoja de datos )
| Número de pieza | BS170F | |
| Descripción | N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET | |
| Fabricantes | Zetex Semiconductors | |
| Logotipo |  |
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SOT23 N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 3 - JANUARY 1996
FEATURES
* 60Volt VDS
* RDS(ON) = 5Ω
BS170F
S
D
PARTMARKING DETAIL – MV
G
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Drain-Source Voltage
Continuous Drain Current at Tamb=25°C
Pulsed Drain Current
Gate Source Voltage
Power Dissipation at Tamb=25°C
Operating and Storage Temperature Range
SYMBOL
VDS
ID
IDM
VGS
Ptot
Tj:Tstg
SOT23
VALUE
60
0.15
3
± 20
330
-55 to +150
UNIT
V
mA
A
V
mW
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Drain-Source
Breakdown Voltage
BVDSS 60 90
V ID=100µA, VGS=0V
Gate-Source Threshold
Voltage
VGS(th)
0.8
3 V ID=1mA, VDS= VGS
Gate-Body Leakage
Zero Gate Voltage Drain
Current
IGSS
IDSS
10 nA VGS=15V, VDS=0V
0.5 µA VDS=25V, VGS=0V
Static Drain-Source On-State RDS(on)
Resistance (1)
5 Ω VGS=10V, ID=200mA
Forward Transconductance
(1)(2)
gfs
200 mS VDS=10V, ID=200mA
Input Capacitance (2)
Ciss
60 pF VDS=10V, VGS =0V,
f=1MHz
Turn-On Delay Time (2)(3)
Turn-Off Delay Time (2)(3)
td(on)
td(off)
10 ns
10 ns VDD ≈-15V, ID=600mA
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% (2) Sample test.
(3) Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator
Spice parameter data is available upon request for this device
For typical characteristics graphs refer to ZVN3306F datasheet.
3 - 54
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