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HGA40N120FV PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 HGA40N120FV
部品説明 N-Channel MOSFET
メーカ SemiHow
ロゴ SemiHow ロゴ 



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HGA40N120FV Datasheet, HGA40N120FV PDF,ピン配置, 機能
HGA40N120FV
1200V Field Stop Trench IGBT
FEATURES
1200V Field Stop Trench Technology
Low Saturation Voltage
High Switching Frequency
Very Soft, Fast Recovery Anti-parallel diode
APPLICATION
Welding Converters
Uninterruptible Power Supply
General Purpose Inverters
March 2015
VCES = 1200 V
IC = 40 A
VCE(sat) typ = 2.0 V
TO-247
GC E
Absolute Maximum Ratings
Symbol
VCES
IC
ICM
IF
IFM
VGES
PD
TJ, TSTG
TL
Parameter
Collector-Emitter Voltage
Collector Current
Collector Current
– Continuous (TC = 25)
– Continuous (TC = 100)
Collector Current
– Pulsed
(Note 1)
Diode Forward Current – Continuous (TC = 100)
Diode Maximum Forward Current
Gate-Emitter Voltage
Power Dissipation
Power Dissipation
– Continuous (TC = 25)
– Continuous (TC = 100)
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
Notes:
1. Pulse width limited by max junction temperature
Thermal Resistance Characteristics
Symbol
RθJC(IGBT)
RθJC(Diode)
RθJA
Parameter
Junction-to-Case
Junction-to-Case
Junction-to-Ambient
Value
1200
64
40
160
20
60
±20
400
160
-55 to +150
300
Typ.
--
--
--
Max.
0.31
1.11
40
Units
V
A
A
A
A
A
V
W
W
Units
/W
SEMIHOW REV.A0,May 2014

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