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HFW8N65UのメーカーはSemiHowです、この部品の機能は「N-Channel MOSFET」です。 |
部品番号 | HFW8N65U |
| |
部品説明 | N-Channel MOSFET | ||
メーカ | SemiHow | ||
ロゴ | |||
このページの下部にプレビューとHFW8N65Uダウンロード(pdfファイル)リンクがあります。 Total 8 pages
HFW8N65U / HFI8N65U
650V N-Channel MOSFET
FEATURES
Originative New Design
Superior Avalanche Rugged Technology
Robust Gate Oxide Technology
Very Low Intrinsic Capacitances
Excellent Switching Characteristics
Unrivalled Gate Charge : 22.0 nC (Typ.)
Extended Safe Operating Area
Lower RDS(ON) ȍ7\S#9GS=10V
100% Avalanche Tested
Jan 2013
BVDSS = 650 V
RDS(on) typ ȍ
ID = 7.5 A
D2-PAK I2-PAK
HFW8N65U HFI8N65U
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25 unless otherwise specified
Symbol
Parameter
Value
VDSS
ID
IDM
VGS
EAS
IAR
EAR
dv/dt
Drain-Source Voltage
Drain Current
Drain Current
Drain Current
– Continuous (TC = 25)
– Continuous (TC = 100)
– Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
650
7.5
4.7
30
ρ30
280
7.5
15.0
4.5
Power Dissipation (TA = 25) *
PD Power Dissipation (TC = 25)
- Derate above 25
3.13
150
1.2
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
-55 to +150
300
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
W/
Thermal Resistance Characteristics
Symbol
Parameter
RșJC
Junction-to-Case
RșJA Junction-to-Ambient*
RșJA Junction-to-Ambient
* When mounted on the minimum pad size recommended (PCB Mount)
Typ.
--
--
--
Max.
0.82
40
62.5
Units
/W
క͑΄Ͷ;ͺΈ͑Ͷ·͟Ͳ͡͝ͻΒΟ͑ͣͤ͑͢͡
1 Page Typical Characteristics
VGS
Top : 15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
Bottom : 5.0 V
10-1
100
* Notes :
1. 300us Pulse Test
2. TC = 25oC
101
VDS, Drain-Source Voltage [V]
Figure 1. On Region Characteristics
3
2 VGS = 10V
1 VGS = 20V
Note : TJ = 25oC
0
0 4 8 12 16 20
ID, Drain Current [A]
Figure 3. On Resistance Variation vs
Drain Current and Gate Voltage
2000
1600
1200
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
Ciss
800
400
0
10-1
Coss
* Note ;
1. VGS = 0 V
2. f = 1 MHz
Crss
100 101
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
10
25oC
1 150oC
-25oC
* Notes :
1. VDS= 30V
2. 300us Pulse Test
0.1
2 V4 GS, Gate-Sour6ce Voltage [V]8 10
Figure 2. Transfer Characteristics
10
1
150oC 25oC
0.1
0.0
* Notes :
1. VGS= 0V
2. 300us Pulse Test
0.2 0.4 0.6 0.8
VSD, Source-Drain Voltage [V]
1.0
1.2
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
12
10
VDS = 130V
VDS = 325V
VDS = 520V
8
6
4
2
Note : ID = 7.5A
0
0 5 10 15 20 25
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
క͑΄Ͷ;ͺΈ͑Ͷ·͟Ͳ͡͝ͻΒΟ͑ͣͤ͑͢͡
3Pages Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+
VDS
_
IS
L
Driver
RG
VGS
Same Type
as DUT
• dv/dt controlled by RG
• IS controlled by pulse period
VDD
VGS
( Driver )
IS
( DUT )
VDS
( DUT )
D = --GG--aa--tt-ee--PP--uu--ll-ss-ee---PW--e-i-rd-iot-h-d-
10V
IFM , Body Diode Forward Current
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
Vf
Body Diode
Forward Voltage Drop
VDD
క͑΄Ͷ;ͺΈ͑Ͷ·͟Ͳ͡͝ͻΒΟ͑ͣͤ͑͢͡
6 Page | |||
ページ | 合計 : 8 ページ | ||
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HFW8N65U | N-Channel MOSFET | SemiHow |