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HFI6N90のメーカーはSemiHowです、この部品の機能は「N-Channel MOSFET」です。 |
部品番号 | HFI6N90 |
| |
部品説明 | N-Channel MOSFET | ||
メーカ | SemiHow | ||
ロゴ | |||
このページの下部にプレビューとHFI6N90ダウンロード(pdfファイル)リンクがあります。 Total 8 pages
March 2013
HFW6N90 / HFI6N90
900V N-Channel MOSFET
FEATURES
Originative New Design
Superior Avalanche Rugged Technology
Robust Gate Oxide Technology
Very Low Intrinsic Capacitances
Excellent Switching Characteristics
Unrivalled Gate Charge : 35 nC (Typ.)
Extended Safe Operating Area
Lower RDS(ON) : 1.95 ȍ7\S#9GS=10V
100% Avalanche Tested
BVDSS = 900 V
RDS(on) typ = 1.95 ȍ
ID = 6.0 A
D2-PAK I2-PAK
HFW6N90
HFI6N90
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25 unless otherwise specified
Symbol
Parameter
Value
VDSS
ID
IDM
VGS
EAS
IAR
EAR
dv/dt
Drain-Source Voltage
Drain Current
Drain Current
Drain Current
– Continuous (TC = 25ఁ͚͑
– Continuous (TC = 100ఁ͚͑
– Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
900
6.0
3.8
24
ρ30
650
6.0
16.7
4.5
PD
TJ, TSTG
TL
Power Dissipation (TA = 25ଇ) *
Power Dissipation (TC = 25ఁ͚͑
͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͞͵ΖΣΒΥΖ͑ΒΓΠΧΖ͑ͣͦఁ͑
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
3.13
167
1.33
-55 to +150
300
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
W/ఁ͑
ఁ͑
ఁ͑
Thermal Resistance Characteristics
Symbol
RșJC
RșJA
RșJA
Junction-to-Case
Parameter
Junction-to-Ambient*
Junction-to-Ambient
* When mounted on the minimum pad size recommended (PCB Mount)
Typ.
--
--
--
Max.
0.75
40
62.5
Units
ఁ͠Έ͑
క͑΄Ͷ;ͺΈ͑Ͷ·͟Ͳ͡͝;ΒΣΔΙ͑ͣͤ͑͢͡
1 Page Typical Characteristics
Top :
101
VGS
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
100
10-1
10-2
10-1
䈜㻌㻺㼛㼠㼑㼟㻌㻦
ȝ V3XOVH7HVW
2. TC = 25 䉝
100 101
VDS, Drain-Source Voltage [V]
Figure 1. On Region Characteristics
4.5
4.0
3.5 VGS = 10V
3.0 VGS = 20V
2.5
2.0
䈜㻌㻺㼛㼠㼑㻌㻦㻌㼀J = 25 䉝
1.5
0 3 6 9 12 15 18
ID, Drain Current [A]
Figure 3. On Resistance Variation vs
Drain Current and Gate Voltage
2500
2000
1500
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
Ciss
1000
500
0
10-1
Coss 䈜㻌㻺㼛㼠㼑㼟㻌㻦
1. VGS = 0 V
2. f = 1 MHz
Crss
100 101
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
101
150oC
25oC
100
-55oC
䈜㻌㻺㼛㼠㼑㼟㻌㻦
1. VDS = 50V
ȝ V3XOVH7HVW
10-1
2 4 6 8 10
VGS, Gate-Source Voltage [V]
Figure 2. Transfer Characteristics
101
100
150 䉝 25䉝
10-1
0.2
䈜㻌㻺㼛㼠㼑㼟㻌㻦
1. VGS = 0V
ȝ V3XOVH7HVW
0.4 0.6 0.8 1.0 1.2
VSD, Source-Drain voltage [V]
1.4
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
12
VDS = 180V
10 VDS = 450V
VDS = 720V
8
6
4
2
䈜㻌㻺㼛㼠㼑㻌㻦㻌㻵D = 6.0A
0
0 5 10 15 20 25 30 35 40
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
క͑΄Ͷ;ͺΈ͑Ͷ·͟Ͳ͡͝;ΒΣΔΙ͑ͣͤ͑͢͡
3Pages Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+
VDS
_
IS
L
Driver
RG
VGS
Same Type
as DUT
• dv/dt controlled by RG
• IS controlled by pulse period
VDD
VGS
( Driver )
IS
( DUT )
VDS
( DUT )
D = --G--a--t-e--P--u--l-s-e---W---i-d-t-h--
Gate Pulse Period
10V
IFM , Body Diode Forward Current
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
Vf
Body Diode
Forward Voltage Drop
VDD
క͑΄Ͷ;ͺΈ͑Ͷ·͟Ͳ͡͝;ΒΣΔΙ͑ͣͤ͑͢͡
6 Page | |||
ページ | 合計 : 8 ページ | ||
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HFI6N90 | N-Channel MOSFET | SemiHow |