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C2590 PDF Data sheet ( 特性 )

部品番号 C2590
部品説明 2SC2590
メーカ Panasonic
ロゴ Panasonic ロゴ 



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C2590 Datasheet, C2590 PDF,ピン配置, 機能
Power Transistors
2SC2590
Silicon NPN epitaxial planar type
For low-frequency power amplification
Features
Excellent collector current IC characteristics of forward current
transfer ratio hFE
High transition frequency fT
TO-126B package which requires no insulation plate for installa-
tion to the heat sink
φ 3.16±0.1
8.0+–00..15
Unit: mm
3.2±0.2
Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
120
120
5
0.5
1.0
1.2
150
55 to +150
Unit
V
V
V
A
A
W
°C
°C
0.75±0.1
0.5±0.1
4.6±0.2
2.3±0.2
0.5±0.1
1.76±0.1
123
1: Emitter
2: Collector
3: Base
TO-126B-A1 Package
Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-emitter voltage (Base open) VCEO IC = 100 µA, IB = 0
120
V
Emitter-base voltage (Collector open) VEBO IE = 10 µA, IC = 0 5 V
Forward current transfer ratio *1
hFE1 *2 VCE = 10 V, IC = 150 mA
90 220
hFE2 VCE = 5 V, IC = 500 mA
65 100
Collector-emitter saturation voltage
VCE(sat) IC = 300 mA, IB = 30 mA
1.0 V
Base-emitter saturation voltage
VBE(sat) IC = 300 mA, IB = 30 mA
1.2 V
Transition frequency
fT VCB = 10 V, IE = −50 mA, f = 200 MHz
200
MHz
Collector output capacitance
(Common base, input open circuited)
Cob VCB = 10 V, IE = 0, f = 1 MHz
11 20
pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
*2: Rank classification
Rank
Q
R
hFE1
90 to 155
130 to 220
Publication date: January 2003
SJD00100BED
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