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1N6820のメーカーはMicrosemi Corporationです、この部品の機能は「LOW REVERSE LEAKAGE SCHOTTKY DIODE」です。 |
部品番号 | 1N6820 |
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部品説明 | LOW REVERSE LEAKAGE SCHOTTKY DIODE | ||
メーカ | Microsemi Corporation | ||
ロゴ | |||
このページの下部にプレビューと1N6820ダウンロード(pdfファイル)リンクがあります。 Total 2 pages
2830 S. Fairview St.
Santa Ana, CA 92704
PH: (714) 979-8220
FAX: (714) 966-5256
1N6820
(MSASC75W100F)
Features
1N6820R• Tungsten schottky barrier for low VF
• Oxide passivated structure for very low leakage currents
PRELIMINARY• Guard ring protection for increased reverse energy capability
(MSASC75W100FR)
• Epitaxial structure minimizes forward voltage drop
• Hermetically sealed, low profile ceramic surface mount power package
• Low package inductance
100 Volts
• Very low thermal resistance
• Available as standard polarity (strap is anode: 1N6820) and reverse
75 Amps
polarity (strap is cathode: 1N6820R)
LOW REVERSE
Maximum Ratings @ 25°C (unless otherwise specified)
LEAKAGE
SCHOTTKY DIODE
DESCRIPTION
SYMBOL
MAX.
UNIT
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current, Tc≤125°C
derating, forward current, Tc≥ 125°C
Nonrepetitive Peak Surge Current, tp= 8.3 ms, half-sinewave
Peak Repetitive Reverse Surge Current, tp= 1µs, f= 1kHz
Junction Temperature Range
Storage Temperature Range
Thermal Resistance, Junction to Case:
1N6820
1N6820R
VRRM
VRWM
VR
IF(ave)
dIF/dT
IFSM
IRRM
Tj
Tstg
θJC
45
45
45
75
4
500
2
-55 to +150
-55 to +150
0.50
0.65
Volts
Volts
Volts
Amps
Amps/°C
Amps
Amp
°C
°C
°C/W
Mechanical Outline
ThinKey™ 4
Datasheet# MSC1031A
1 Page | |||
ページ | 合計 : 2 ページ | ||
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PDF ダウンロード | [ 1N6820 データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
1N6820 | LOW REVERSE LEAKAGE SCHOTTKY DIODE | Microsemi Corporation |
1N6820R | LOW REVERSE LEAKAGE SCHOTTKY DIODE | Microsemi Corporation |
1N6821 | LOW VOLTAGE DROP SCHOTTKY DIODE | Microsemi Corporation |
1N6821R | LOW VOLTAGE DROP SCHOTTKY DIODE | Microsemi Corporation |