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Número de pieza | 1N6818R | |
Descripción | LOW VOLTAGE DROP SCHOTTKY DIODE | |
Fabricantes | Microsemi Corporation | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de 1N6818R (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
No Preview Available ! 2830 S. Fairview St.
Santa Ana, CA 92704
PH: (714) 979-8220
FAX: (714) 966-5256
1N6818
(MSASC75H45F)
Features
1N6818R• Tungsten/Platinum schottky barrier for very low VF
• Oxide passivated structure for very low leakage currents
PRELIMINARY• Guard ring protection for increased reverse energy capability
(MSASC75H45FR)
• Epitaxial structure minimizes forward voltage drop
• Hermetically sealed, low profile ceramic surface mount power package
• Low package inductance
45 Volts
• Very low thermal resistance
• Available as standard polarity (strap is anode: 1N6818) and reverse
75 Amps
polarity (strap is cathode: 1N6818R)
LOW VOLTAGE
Maximum Ratings @ 25°C (unless otherwise specified)
DROP SCHOTTKY
DIODE
DESCRIPTION
SYMBOL
MAX.
UNIT
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current, Tc≤125°C
derating, forward current, Tc≥ 125°C
Nonrepetitive Peak Surge Current, tp= 8.3 ms, half-sinewave
Peak Repetitive Reverse Surge Current, tp= 1µs, f= 1kHz
Junction Temperature Range
Storage Temperature Range
Thermal Resistance, Junction to Case:
1N6818
1N6818R
VRRM
VRWM
VR
IF(ave)
dIF/dT
IFSM
IRRM
Tj
Tstg
θJC
45
45
45
75
4
500
2
-55 to +150
-55 to +150
0.50
0.65
Volts
Volts
Volts
Amps
Amps/°C
Amps
Amp
°C
°C
°C/W
Mechanical Outline
ThinKey™ 4
Datasheet# MSC1029A
1 page |
Páginas | Total 2 Páginas | |
PDF Descargar | [ Datasheet 1N6818R.PDF ] |
Número de pieza | Descripción | Fabricantes |
1N6818 | LOW VOLTAGE DROP SCHOTTKY DIODE | Microsemi Corporation |
1N6818R | LOW VOLTAGE DROP SCHOTTKY DIODE | Microsemi Corporation |
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