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PDF 1N6817R Data sheet ( Hoja de datos )
| Número de pieza | 1N6817R | |
| Descripción | LOW REVERSE LEAKAGE SCHOTTKY DIODE | |
| Fabricantes | Microsemi Corporation | |
| Logotipo |  |
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2830 S. Fairview St.
Santa Ana, CA 92704
PH: (714) 979-8220
FAX: (714) 966-5256
1N6817
(MSASC25W100K)
Features
1N6817R
• Tungsten schottky barrier
• Oxide passivated structure
(MSASC25W100KR)
• Guard ring protection for increased reverse energy capability
• Epitaxial structure minimizes forward voltage drop
• Hermetically sealed, low profile ceramic surface mount power package
• Low package inductance
• Very low thermal resistance
• Available as standard polarity (strap is anode: 1N6817) and reverse
100 Volts
25 Amps
polarity (strap is cathode: 1N6817R)
• TXV-level screening (MSASC25W100KV) or S-level (MSASC25W100KS)
LOW REVERSE
screening i.a.w. Microsemi internal procedure PS11.50 available
LEAKAGE
Maximum Ratings @ 25°C (unless otherwise specified)
SCHOTTKY DIODE
DESCRIPTION
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current, Tc≤ 145°C
derating, forward current, Tc≥ 145°C
Nonrepetitive Peak Surge Current, tp= 8.3 ms, half-sinewave
Peak Repetitive Reverse Surge Current, tp= 1µs, f= 1kHz
Junction Temperature Range
Storage Temperature Range
Thermal Resistance, Junction to Case:
1N6817
1N6817R
SYMBOL
VRRM
VRWM
VR
IF(ave)
dIF/dT
IFSM
IRRM
Tj
Tstg
θJC
MAX.
100
100
100
25
(3.3)
120
2
-55 to +175
-55 to +175
1.25
1.35
UNIT
Volts
Volts
Volts
Amps
Amps/°C
Amps
Amp
°C
°C
°C/W
Datasheet# MSC1034B August, 2000
Mechanical Outline
ThinKey™2
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet 1N6817R.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| 1N6817 | LOW REVERSE LEAKAGE SCHOTTKY DIODE | Microsemi Corporation |
| 1N6817R | LOW REVERSE LEAKAGE SCHOTTKY DIODE | Microsemi Corporation |
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