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RB520S-30 PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 RB520S-30
部品説明 SMD Schottky Barrier Diode
メーカ Taiwan Semiconductor
ロゴ Taiwan Semiconductor ロゴ 



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RB520S-30 Datasheet, RB520S-30 PDF,ピン配置, 機能
RB520S-30
Taiwan Semiconductor
Small Signal Product
200mW, Low VF SMD Schottky Barrier Diode
FEATURES
- Low power loss, high current capability, low VF
- Surface mount device type
- Moisture sensitivity level 1
- Matte Tin(Sn) lead finish with Nickel(Ni) underplate
- Pb free and RoHS compliant
- Green compound (Halogen free) with suffix "G" on
packing code and prefix "G" on date code
MECHANICAL DATA
- Case: SOD-523F small outline plastic package
- Terminal: Matte tin plated, lead free,
solderable per MIL-STD-202, Method 208 guaranteed
- High temperature soldering guaranteed: 260°C/10s
- Polarity: Indicated by cathode band
- Weight: 1.68 ± 0.5 mg
- Marking code: B
SOD-523F
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Power Dissipation
PD 200
Repetitive Peak Reverse Voltage
VRRM
30
Reverse Voltage
Mean Forward Current @ TL=100oC (Lead
Non-Repetitive Peak Forward Surge Current
(Note 1)
VR
IO
IFSM
30
200
1
Thermal Resistance (Junction to Ambient)
RθJA
500
Junction and Storage Temperature Range
TJ ,TSTG
-55 to +125
Note 1: Test condition: 8.3 ms single half sine-wave superimposed on rated load (JEDEC method)
UNIT
mW
V
V
mA
A
°C/W
oC
PARAMETER
Reverse Breakdown Voltage
Forward Voltage
Reverse Leakage Current
SYMBOL
V(BR)
VF
IR
MIN
30
-
-
TYP
MAX
-
0.6
1
TEST CONDITION
IR = 500 µA
IF = 200 mA
VR = 10 V
UNIT
V
V
µA
Document Number: DS_S1404003
Version: B14

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