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IRFHM3911TRPBF の電気的特性と機能

IRFHM3911TRPBFのメーカーはInternational Rectifierです、この部品の機能は「Power MOSFET ( Transistor )」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRFHM3911TRPBF
部品説明 Power MOSFET ( Transistor )
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




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IRFHM3911TRPBF Datasheet, IRFHM3911TRPBF PDF,ピン配置, 機能
VDSS
RDS(on) max
(@VGS = 10V)
Qg (typical)
ID
(@TC (Bottom) = 25°C)
100
115
17
11
V
m
nC
A
Applications
 POE+ Power Sourcing Equipment Switch
IRFHM3911TRPbF
HEXFET® Power MOSFET
  
S SG
S
D
D
D
D
D
PQFN 3.3X3.3 mm
Features
Large Safe Operating Area (SOA)
Low Thermal Resistance to PCB
Low Profile (<1.05mm)
Industry-Standard Pinout
Compatible with Existing Surface Mount Techniques
RoHS Compliant, Halogen-Free
MSL1, Industrial Qualification
Benefits
Increased Ruggedness
Enable better thermal dissipation
Increased Power Density
results in Multi-Vendor Compatibility
 Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Base part number
 
IRFHM3911PbF
Package Type
 
PQFN 3.3mm x 3.3mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Orderable Part Number
IRFHM3911TRPbF
Absolute Maximum Ratings
VGS
ID @ TA = 25°C
ID @ TC(Bottom) = 25°C
ID @ TC(Bottom) = 100°C
ID @ TC = 25°C
IDM
PD @TA = 25°C
PD @TC(Bottom) = 25°C
TJ
TSTG
Parameter
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
(Source Bonding Technology Limited)
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
 
Max.
± 20
3.2
11
6.6
20
36
2.8
29
0.023
-55 to + 150
 
Units
V
A
W
W/°C
°C
Notes through are on page 9
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July 1, 2014

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IRFHM3911TRPBF pdf, ピン配列
 
100
10
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.0V
4.5V
4.0V
100
10
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.0V
4.5V
4.0V
IRFHM3911TRPbF
1
60µs PULSE WIDTH
Tj = 25°C
0.1
0.1
4.0V
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 1. Typical Output Characteristics
100
10
TJ = 150°C
1 4.0V
0.1
0.1
60µs PULSE WIDTH
Tj = 150°C
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 2. Typical Output Characteristics
2.5
ID = 6.5A
VGS = 10V
2.0
1.5
1
0.1
3.0
TJ = 25°C
VDS = 50V
60µs PULSE WIDTH
4.0 5.0 6.0
VGS, Gate-to-Source Voltage (V)
7.0
1.0
0.5
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
Fig 3. Typical Transfer Characteristics
10000
1000
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
Coss
Crss
100
Fig 4. Normalized On-Resistance vs. Temperature
14.0
ID= 6.3A
12.0
10.0
VDS= 80V
VDS= 50V
VDS= 20V
8.0
6.0
4.0
2.0
10
1
10
VDS, Drain-to-Source Voltage (V)
100
0.0
0
5 10 15 20
QG, Total Gate Charge (nC)
25
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
3 www.irf.com © 2014 International Rectifier
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July 1, 2014


3Pages


IRFHM3911TRPBF 電子部品, 半導体
  IRFHM3911TRPbF
Fig 15. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs
V(BR)DSS
15V tp
VDS
L
DRIVER
RG
20V
tp
D.U.T
IAS
0.01
+
-
VDD
A
Fig 16a. Unclamped Inductive Test Circuit
I AS
Fig 16b. Unclamped Inductive Waveforms
Fig 17a. Switching Time Test Circuit
VDD 
Fig 17b. Switching Time Waveforms
Id
Vds
Vgs
Vgs(th)
Fig 18. Gate Charge Test Circuit
6 www.irf.com © 2014 International Rectifier
Qgs1 Qgs2 Qgd
Qgodr
Fig 19. Gate Charge Waveform
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July 1, 2014

6 Page



ページ 合計 : 9 ページ
 
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部品番号部品説明メーカ
IRFHM3911TRPBF

Power MOSFET ( Transistor )

International Rectifier
International Rectifier


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