DataSheet.jp

AUIRG4PC40S-E の電気的特性と機能

AUIRG4PC40S-EのメーカーはInternational Rectifierです、この部品の機能は「Insulated Gate Bipolar Transistor」です。


製品の詳細 ( Datasheet PDF )

部品番号 AUIRG4PC40S-E
部品説明 Insulated Gate Bipolar Transistor
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




このページの下部にプレビューとAUIRG4PC40S-Eダウンロード(pdfファイル)リンクがあります。

Total 10 pages

No Preview Available !

AUIRG4PC40S-E Datasheet, AUIRG4PC40S-E PDF,ピン配置, 機能
  AUTOMOTIVE GRADE
Insulated Gate Bipolar Transistor
Features
 Standard: Optimized for minimum saturation voltage
and low operating frequencies ( < 1kHz)
 Generation 4 IGBT design provides tighter parameter
distribution and higher efficiency than Generation 3
 Industry standard TO-247AD package
 Lead-Free
 Automotive Qualified*
C 
G
E
n-channel
 C
AUIRG4PC40S-E
VCES = 600V
VCE(ON) typ. = 1.32V
@ VGE = 15V, IC = 31A
Benefits
 Generation 4 IGBT's offer highest efficiency available
 IGBT's optimized for specified application conditions
 Designed to be a "drop-in" replacement for equivalent
industry-standard Generation 3 IR IGBT's
G
Gate
GCE
AUIRG4PC40SE 
      TO247AD 
C
Collector
E
Emitter
Base part number
AUIRG4PC40S-E
Package Type
TO-247AD
Standard Pack
Form
Quantity
Tube
25
Orderable Part Number
AUIRG4PC40S-E
Absolute Maximum Ratings
Parameter
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
VGE
EARV
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulse Collector Current
Clamped Inductive Load Current
Continuous Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
Max.
600
60
31
120
120
±20
15
160
65
-55 to +150
300 (0.063 in. (1.6mm) from case)
10 lbf·in (1.1 N·m)
Units
V
A 
V
W
C
Thermal Resistance
Parameter
RJC Thermal Resistance Junction-to-Case
RCS
RJA
Wt
Thermal Resistance, Case-to-Sink (flat, greased surface)
Thermal Resistance, Junction-to-Ambient (typical socket mount)
Weight
* Qualification standard can be found at http:// www.irf.com/
Typ.
–––
0.24
–––
6 (0.21)
Max.
0.77
–––
40
–––
Units
°C/W  
 g (oz) 
1 www.irf.com © 2014 International Rectifier
Submit Datasheet Feedback
March 31, 2014

1 Page





AUIRG4PC40S-E pdf, ピン配列
  AUIRG4PC40S-E
80
60
Square wave:
40 60% of rated
voltage
20
Ideal diodes
0
0.1
For both:
Duty cycle: 50%
TJ = 125°C
Tsink = 90°C
Gate drive as specified
Power Dissipation = 35W
Triangular wave:
Clamp voltage:
80% of rated
1 10
f, Frequency (kHz)
A
100
Fig. 1 - Typical Load Current vs. Frequency
(For square wave, I=IRMS of fundamental; for triangular wave, I=IPK)
1000
100
TJ = 25°C
10
TJ = 150°C
VGE = 15V
1 20µs PULSE WIDTH A
0.1 1 10
VCE , Collector-to-Emitter Voltage (V)
Fig. 2 - Typical Output Characteristics
1000
100
TJ = 150°C
TJ = 25°C
10
V CC = 50V
1 5µs PULSE WIDTH A
5 6 7 8 9 10
VGE, Gate-to-Emitter Voltage (V)
Fig. 3 - Typical Transfer Characteristics
3 www.irf.com © 2014 International Rectifier
Submit Datasheet Feedback
March 31, 2014


3Pages


AUIRG4PC40S-E 電子部品, 半導体
 
30 RG = 10
T J = 150°C
VCC = 480V
VGE = 15V
20
10
0A
0 10 20 30 40 50 60 70
IC , Collector-to-Emitter Current (A)
Fig. 11 - Typical Switching Losses vs.
Collector-to-Emitter Current
AUIRG4PC40S-E
1000  VGGEE= 20V
 TJ = 125°C
100
SAFE OPERATING AREA 
10
1
1 10 100 1000
VCE , Collector-to-Emitter Voltage (V)
Fig. 12 - Turn-Off SOA
6 www.irf.com © 2014 International Rectifier
Submit Datasheet Feedback
March 31, 2014

6 Page



ページ 合計 : 10 ページ
 
PDF
ダウンロード
[ AUIRG4PC40S-E データシート.PDF ]


データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。


共有リンク

Link :


部品番号部品説明メーカ
AUIRG4PC40S-E

Insulated Gate Bipolar Transistor

International Rectifier
International Rectifier


www.DataSheet.jp    |   2020   |  メール    |   最新    |   Sitemap