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IRFB4137PBF の電気的特性と機能

IRFB4137PBFのメーカーはInternational Rectifierです、この部品の機能は「Power MOSFET ( Transistor )」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRFB4137PBF
部品説明 Power MOSFET ( Transistor )
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




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IRFB4137PBF Datasheet, IRFB4137PBF PDF,ピン配置, 機能
Application
High Efficiency Synchronous Rectification in SMPS
Uninterruptible Power Supply
High Speed Power Switching
Hard Switched and High Frequency Circuits
 
G
D
S
IRFB4137PbF
HEXFET® Power MOSFET
VDSS
RDS(on) typ.
max
ID
300V
56m
69m
38A
Benefits
Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
Fully Characterized Capacitance and Avalanche SOA
Enhanced body diode dV/dt and dI/dt Capability
Lead-Free, RoHS Compliant
G
Gate
S
D
G
TO-220Pak
D
Drain
S
Source
Base part number Package Type
IRFB4137PbF
TO-220Pak
Standard Pack
Form
Quantity
Tube
50
Orderable Part Number
IRFB4137PbF
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting Torque, 6-32 or M3 Screw
Avalanche Characteristics 
EAS (Thermally limited)
Single Pulse Avalanche Energy 
Thermal Resistance  
Parameter
RJC Junction-to-Case 
RCS
Case-to-Sink, Flat Greased Surface
RJA Junction-to-Ambient 
Max.
38
27
152
341
2.3
± 20
8.9
-55 to + 175  
300
10 lbf·in (1.1 N·m)
Units
A
W
W/°C
V
V/ns
°C  
 
414 
Typ.
–––
0.50
–––
Max.
0.44
–––
62
mJ
Units
°C/W
1 www.irf.com © 2012 International Rectifier
October 30, 2012

1 Page





IRFB4137PBF pdf, ピン配列
  IRFB4137PbF
1000
100
10
1
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.5V
6.0V
5.5V
5.0V
1000
100
10
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.5V
6.0V
5.5V
5.0V
5.0V
0.1
0.01
0.1
5.0V
60µs PULSE WIDTH
Tj = 25°C
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 1. Typical Output Characteristics
1000
100
TJ = 175°C
10
TJ = 25°C
1
0.1
0.1
60µs PULSE WIDTH
Tj = 175°C
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 2. Typical Output Characteristics
3.5
ID = 24A
3.0 VGS = 10V
2.5
2.0
1
0.1
2
VDS = 50V
60µs PULSE WIDTH
4 6 8 10 12
VGS, Gate-to-Source Voltage (V)
14
Fig 3. Typical Transfer Characteristics
100000
10000
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
1000
100
Coss
Crss
1.5
1.0
0.5
-60
-20 20 60 100 140
TJ , Junction Temperature (°C)
180
Fig 4. Normalized On-Resistance vs. Temperature
14.0
ID = 24A
12.0
VDS= 240V
10.0 VDS= 150V
VDS= 60V
8.0
6.0
4.0
2.0
10
1
10 100
VDS, Drain-to-Source Voltage (V)
1000
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
3 www.irf.com © 2012 International Rectifier
0.0
0
20 40 60 80 100
QG, Total Gate Charge (nC)
120
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
October 30, 2012


3Pages


IRFB4137PBF 電子部品, 半導体
  IRFB4137PbF
Fig 18. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs
V(BR)DSS
15V tp
VDS
L
DRIVER
RG
20V
tp
D.U.T
IAS
0.01
+
-
VDD
A
Fig 19a. Unclamped Inductive Test Circuit
I AS
Fig 19b. Unclamped Inductive Waveforms
Fig 20a. Switching Time Test Circuit
Fig 20b. Switching Time Waveforms
Vds
Id
Vgs
Fig 21a. Gate Charge Test Circuit
6 www.irf.com © 2012 International Rectifier
Vgs(th)
Qgs1 Qgs2
Qgd
Qgodr
Fig 21b. Gate Charge Waveform
October 30, 2012

6 Page



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部品番号部品説明メーカ
IRFB4137PBF

Power MOSFET ( Transistor )

International Rectifier
International Rectifier


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