|
|
IRFB4137PBFのメーカーはInternational Rectifierです、この部品の機能は「Power MOSFET ( Transistor )」です。 |
部品番号 | IRFB4137PBF |
| |
部品説明 | Power MOSFET ( Transistor ) | ||
メーカ | International Rectifier | ||
ロゴ | |||
このページの下部にプレビューとIRFB4137PBFダウンロード(pdfファイル)リンクがあります。 Total 8 pages
Application
High Efficiency Synchronous Rectification in SMPS
Uninterruptible Power Supply
High Speed Power Switching
Hard Switched and High Frequency Circuits
G
D
S
IRFB4137PbF
HEXFET® Power MOSFET
VDSS
RDS(on) typ.
max
ID
300V
56m
69m
38A
Benefits
Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
Fully Characterized Capacitance and Avalanche SOA
Enhanced body diode dV/dt and dI/dt Capability
Lead-Free, RoHS Compliant
G
Gate
S
D
G
TO-220Pak
D
Drain
S
Source
Base part number Package Type
IRFB4137PbF
TO-220Pak
Standard Pack
Form
Quantity
Tube
50
Orderable Part Number
IRFB4137PbF
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting Torque, 6-32 or M3 Screw
Avalanche Characteristics
EAS (Thermally limited)
Single Pulse Avalanche Energy
Thermal Resistance
Parameter
RJC Junction-to-Case
RCS
Case-to-Sink, Flat Greased Surface
RJA Junction-to-Ambient
Max.
38
27
152
341
2.3
± 20
8.9
-55 to + 175
300
10 lbf·in (1.1 N·m)
Units
A
W
W/°C
V
V/ns
°C
414
Typ.
–––
0.50
–––
Max.
0.44
–––
62
mJ
Units
°C/W
1 www.irf.com © 2012 International Rectifier
October 30, 2012
1 Page IRFB4137PbF
1000
100
10
1
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.5V
6.0V
5.5V
5.0V
1000
100
10
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.5V
6.0V
5.5V
5.0V
5.0V
0.1
0.01
0.1
5.0V
60µs PULSE WIDTH
Tj = 25°C
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 1. Typical Output Characteristics
1000
100
TJ = 175°C
10
TJ = 25°C
1
0.1
0.1
60µs PULSE WIDTH
Tj = 175°C
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 2. Typical Output Characteristics
3.5
ID = 24A
3.0 VGS = 10V
2.5
2.0
1
0.1
2
VDS = 50V
60µs PULSE WIDTH
4 6 8 10 12
VGS, Gate-to-Source Voltage (V)
14
Fig 3. Typical Transfer Characteristics
100000
10000
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
1000
100
Coss
Crss
1.5
1.0
0.5
-60
-20 20 60 100 140
TJ , Junction Temperature (°C)
180
Fig 4. Normalized On-Resistance vs. Temperature
14.0
ID = 24A
12.0
VDS= 240V
10.0 VDS= 150V
VDS= 60V
8.0
6.0
4.0
2.0
10
1
10 100
VDS, Drain-to-Source Voltage (V)
1000
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
3 www.irf.com © 2012 International Rectifier
0.0
0
20 40 60 80 100
QG, Total Gate Charge (nC)
120
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
October 30, 2012
3Pages IRFB4137PbF
Fig 18. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs
V(BR)DSS
15V tp
VDS
L
DRIVER
RG
20V
tp
D.U.T
IAS
0.01
+
-
VDD
A
Fig 19a. Unclamped Inductive Test Circuit
I AS
Fig 19b. Unclamped Inductive Waveforms
Fig 20a. Switching Time Test Circuit
Fig 20b. Switching Time Waveforms
Vds
Id
Vgs
Fig 21a. Gate Charge Test Circuit
6 www.irf.com © 2012 International Rectifier
Vgs(th)
Qgs1 Qgs2
Qgd
Qgodr
Fig 21b. Gate Charge Waveform
October 30, 2012
6 Page | |||
ページ | 合計 : 8 ページ | ||
|
PDF ダウンロード | [ IRFB4137PBF データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
IRFB4137PBF | Power MOSFET ( Transistor ) | International Rectifier |