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IRFB4127PBF の電気的特性と機能

IRFB4127PBFのメーカーはInternational Rectifierです、この部品の機能は「Power MOSFET ( Transistor )」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRFB4127PBF
部品説明 Power MOSFET ( Transistor )
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




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IRFB4127PBF Datasheet, IRFB4127PBF PDF,ピン配置, 機能
PD -97136A
Applications
l High Efficiency Synchronous Rectification in SMPS
l Uninterruptible Power Supply
l High Speed Power Switching
l Hard Switched and High Frequency Circuits
G
Benefits
l Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
l Fully Characterized Capacitance and Avalanche
SOA
l Enhanced body diode dV/dt and dI/dt Capability
l Lead-Free
IRFB4127PbF
HEXFET® Power MOSFET
D VDSS
200V
RDS(on) typ.
17m:
max. 20m:
S ID
76A
DS
G
TO-220AB
G
Gate
D
Drain
S
Source
Absolute Maximum Ratings
Symbol
Parameter
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
ID @ TC = 100°C
IDM
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current c
PD @TC = 25°C Maximum Power Dissipation
Linear Derating Factor
VGS Gate-to-Source Voltage
dv/dt
Peak Diode Recovery e
TJ Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
Avalanche Characteristics
EAS (Thermally limited)
IAR
EAR
Single Pulse Avalanche Energy d
Avalanche Current c
Repetitive Avalanche Energy f
Thermal Resistance
Symbol
Parameter
RθJC
RθCS
RθJA
www.irf.com
Junction-to-Case j
Case-to-Sink, Flat Greased Surface
Junction-to-Ambient ij
Max.
76
54
300
375
2.5
± 20
57
-55 to + 175
300
10lbxin (1.1Nxm)
250
See Fig. 14, 15, 22a, 22b,
Typ.
–––
0.50
–––
Max.
0.4
–––
62
Units
A
W
W/°C
V
V/ns
°C
mJ
A
mJ
Units
°C/W
1
8/28/08

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IRFB4127PBF pdf, ピン配列
1000
100
10
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
1
0.1
0.01
0.1
4.5V
60μs PULSE WIDTH
Tj = 25°C
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 1. Typical Output Characteristics
1000
VDS = 50V
60μs PULSE WIDTH
100
TJ = 175°C
10
TJ = 25°C
1
0.1
3.0
4.0 5.0 6.0 7.0
VGS, Gate-to-Source Voltage (V)
8.0
Fig 3. Typical Transfer Characteristics
8000
6000
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
4000
2000
Coss
0 Crss
1 10
100
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
www.irf.com
1000
100
10
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
IRFB4127PbF
1
0.1
0.1
4.5V
60μs PULSE WIDTH
Tj = 175°C
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 2. Typical Output Characteristics
3.5
ID = 44A
3.0 VGS = 10V
2.5
2.0
1.5
1.0
0.5
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
TJ , Junction Temperature (°C)
Fig 4. Normalized On-Resistance vs. Temperature
16
ID= 44A
12
VDS= 160V
VDS= 100V
VDS= 40V
8
4
0
0 20 40 60 80 100 120
QG Total Gate Charge (nC)
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
3


3Pages


IRFB4127PBF 電子部品, 半導体
IRFB4127PbF
6.0
5.0
4.0
ID = 1.0A
ID = 1.0mA
ID = 250μA
50
40
30
3.0
2.0
1.0
-75 -50 -25 0 25 50 75 100 125 150 175
TJ , Temperature ( °C )
Fig 16. Threshold Voltage Vs. Temperature
60
20
IF = 29A
10 VR = 100V
TJ = 125°C
TJ = 25°C
0
100 200 300 400 500 600 700 800 900 1000
dif / dt - (A / μs)
Fig. 17 - Typical Recovery Current vs. dif/dt
3000
50 2500
40 2000
30 1500
20
IF = 44A
VR = 100V
10 TJ = 125°C
TJ = 25°C
0
100 200 300 400 500 600 700 800 900 1000
dif / dt - (A / μs)
Fig. 18 - Typical Recovery Current vs. dif/dt
3000
1000
500
0
IF = 29A
VR = 100V
TJ = 125°C
TJ = 25°C
100 200 300 400 500 600 700 800 900 1000
dif / dt - (A / μs)
Fig. 19 - Typical Stored Charge vs. dif/dt
2500
2000
1500
1000
500
IF = 44A
VR = 100V
TJ = 125°C
TJ = 25°C
0
100 200 300 400 500 600 700 800 900 1000
dif / dt - (A / μs)
Fig. 20 - Typical Stored Charge vs. dif/dt
6 www.irf.com

6 Page



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部品番号部品説明メーカ
IRFB4127PBF

Power MOSFET ( Transistor )

International Rectifier
International Rectifier


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