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IRF9310PBF-1 の電気的特性と機能

IRF9310PBF-1のメーカーはInternational Rectifierです、この部品の機能は「Power MOSFET ( Transistor )」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRF9310PBF-1
部品説明 Power MOSFET ( Transistor )
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




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IRF9310PBF-1 Datasheet, IRF9310PBF-1 PDF,ピン配置, 機能
VDS
RDS(on) max
(@VGS = -10V)
RDS(on) max
(@VGS = -4.5V)
Qg (typical)
ID
(@TA = 25°C)
-30 V
4.6
mΩ
6.8
58 nC
-20 A
IRF9310PbF-1
HEXFET® Power MOSFET
S1
S2
S3
G4
8D
7D
6D
5D
SO-8
Features
Industry-standard pinout SO-8 Package
Compatible with Existing Surface Mount Techniques
RoHS Compliant, Halogen-Free
MSL1, Industrial qualification
Benefits
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Base Part Number
IRF9310PbF-1
Package Type
SO-8
Standard Pack
Form
Tube/Bulk
Tape and Reel
Quantity
95
4000
Orderable Part Number
IRF9310PbF-1
IRF9310TRPbF-1
Absolute Maximum Ratings
Parameter
VDS Drain-to-Source Voltage
VGS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
cPulsed Drain Current
fPower Dissipation
fPower Dissipation
Linear Derating Factor
TJ
TSTG
Operating Junction and
Storage Temperature Range
Notes  through … are on page 2
Max.
-30
± 20
-20
-16
-160
2.5
1.6
0.02
-55 to + 150
Units
V
A
W
W/°C
°C
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June 30, 2014

1 Page





IRF9310PBF-1 pdf, ピン配列
IRF9310PbF-1
1000
100
60μs PULSE WIDTH
Tj = 25°C
10
TOP
BOTTOM
VGS
-10V
-4.5V
-3.5V
-3.1V
-2.9V
-2.7V
-2.5V
-2.3V
1000
60μs PULSE WIDTH
Tj = 150°C
100
TOP
BOTTOM
VGS
-10V
-4.5V
-3.5V
-3.1V
-2.9V
-2.7V
-2.5V
-2.3V
1
0.1
-2.3V
0.01
0.1 1 10
-V DS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
100
1000
100
10
1
0.1
-2.3V
1 10
100
-V DS, Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
1.6
ID = -20A
VGS = -10V
1.4
1.2
TJ = 150°C
10 TJ = 25°C
1.0
1
VDS = -10V
60μs PULSE WIDTH
2345
-VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
1.0
0.8
0.6
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
Fig 4. Normalized On-Resistance vs. Temperature
100000
10000
1000
VGS = 0V, f = 1 MHZ
Ciss = C gs + Cgd, C ds SHORTED
Crss = C gd
Coss = Cds + Cgd
Ciss
Coss
Crss
14.0
12.0
10.0
8.0
ID= -16A
VDS= -24V
VDS= -15V
6.0
4.0
2.0
100
1
10 100
-VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance vs.Drain-to-Source Voltage
0.0
0
25 50 75 100 125 150
QG Total Gate Charge (nC)
Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage
3 www.irf.com © 2014 International Rectifier
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June 30, 2014


3Pages


IRF9310PBF-1 電子部品, 半導体
IRF9310PbF-1
L
VCC
DUT
0
210K
SS
Fig 18a. Gate Charge Test Circuit
VDS
L
RG
--V2G0SV
tp
D.U.T
IAS
0.01Ω
DRIVER
VDD
A
15V
Fig 19a. Unclamped Inductive Test Circuit
Id
Vgs
Vds
Vgs(th)
Qgodr
Qgd Qgs2 Qgs1
Fig 18b. Gate Charge Waveform
IAS
tp
V(BR)DSS
Fig 19b. Unclamped Inductive Waveforms
VDS
VGS
RG
-VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
RD
D.U.T.
-
+ VDD
Fig 20a. Switching Time Test Circuit
VGS
10%
td(on) tr
td(off) tf
90%
VDS
Fig 20b. Switching Time Waveforms
6 www.irf.com © 2014 International Rectifier
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June 30, 2014

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部品番号部品説明メーカ
IRF9310PBF-1

Power MOSFET ( Transistor )

International Rectifier
International Rectifier


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