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PDF IRF8910PBF-1 Data sheet ( Hoja de datos )
| Número de pieza | IRF8910PBF-1 | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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VDS
RDS(on) max
(@VGS = 10V)
RDS(on) max
(@VGS = 4.5V)
Qg (typical)
ID
(@TA = 25°C)
20
13.4
18.3
7.4
10
V
mΩ
nC
A
Features
Industry-standard pinout SO-8 Package
Compatible with Existing Surface Mount Techniques
RoHS Compliant, Halogen-Free
MSL1, Industrial qualification
IRF8910PbF-1
HEXFET® Power MOSFET
S1 1
G1 2
S2 3
G2 4
8 D1
7 D1
6 D2
5 D2
Top View
SO-8
Benefits
⇒ Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Base Part Number Package Type
IRF8910PbF-1
SO-8
Standard Pack
Form
Quantity
Tube/Bulk
95
Tape and Reel
4000
Orderable Part Number
IRF8910PbF-1
IRF8910TRPbF-1
Absolute Maximum Ratings
Parameter
VDS Drain-to-Source Voltage
VGS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
cContinuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
TJ
TSTG
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Thermal Resistance
Parameter
RθJL Junction-to-Drain Lead
fgRθJA Junction-to-Ambient
Notes through
are on page 10
Max.
20
± 20
10
8.3
82
2.0
1.3
0.016
-55 to + 150
Units
V
A
W
W/°C
°C
Typ.
–––
–––
Max.
42
62.5
Units
°C/W
1 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback
June 30, 2014
1 page  
IRF8910PbF-1
10
9
8
7
6
5
4
3
2
1
0
25
50 75 100 125
TA , Ambient Temperature (°C)
150
Fig 9. Maximum Drain Current vs.
Ambient Temperature
2.5
2.0
ID = 250μA
1.5
1.0
-75 -50 -25 0
25 50 75 100 125 150
TJ , Temperature ( °C )
Fig 10. Threshold Voltage vs. Temperature
100
D = 0.50
10
1
0.1
0.01
1E-006
0.20
0.10
0.05
0.02
0.01
Ri (°C/W) τi (sec)
R1R1
R2R2
R3R3
R4R4
R5R5
1.2647
0.000091
τJ τJ
τ1 τ1
τCτC 2.0415
0.000776
τ2 τ2
τ3τ3
τ4 τ4
τ5 τ5
18.970 0.188739
SINGLE PULSE
( THERMAL RESPONSE )
CiC= iτ=i/τRi/iRi
Notes:
23.415
16.803
0.757700
25.10000
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
1E-005
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
1
10 100
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
5 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback
June 30, 2014
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet IRF8910PBF-1.PDF ] | |
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