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IRF8714PBF-1 の電気的特性と機能

IRF8714PBF-1のメーカーはInternational Rectifierです、この部品の機能は「Power MOSFET ( Transistor )」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRF8714PBF-1
部品説明 Power MOSFET ( Transistor )
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




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IRF8714PBF-1 Datasheet, IRF8714PBF-1 PDF,ピン配置, 機能
VDS
RDS(on) max
(@VGS = 10V)
Qg (typical)
ID
(@TA = 25°C)
30 V
8.7 mΩ
8.1 nC
14 A
IRF8714PbF-1
HEXFET® Power MOSFET
S1
AA
8D
S2
7D
S3
6D
G4
5D
Top View
SO-8
Applications
l Control MOSFET of Sync-Buck Converters used for Notebook Processor Power
l Control MOSFET for Isolated DC-DC Converters in Networking Systems
Features
Industry-standard pinout SO-8 Package
Compatible with Existing Surface Mount Techniques
RoHS Compliant, Halogen-Free
MSL1, Industrial qualification
Benefits
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Base Part Number Package Type
IRF8714PbF-1
SO-8
Standard Pack
Form
Quantity
Tube/Bulk
95
Tape and Reel
4000
Orderable Part Number
IRF8714PbF-1
IRF8714TRPbF-1
Absolute Maximum Ratings
Parameter
VDS Drain-to-Source Voltage
VGS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
cContinuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
TJ
TSTG
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Max.
30
± 20
14
11
110
2.5
1.6
0.02
-55 to + 150
Units
V
A
W
W/°C
°C
Thermal Resistance
Parameter
gRθJL Junction-to-Drain Lead
fgRθJA Junction-to-Ambient
Typ.
–––
–––
Max.
20
50
Units
°C/W
Notes  through … are on page 9
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November 22, 2013

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IRF8714PBF-1 pdf, ピン配列
IRF8714PbF-1
1000
100
10
1
TOP
BOTTOM
VGS
10V
5.0V
4.5V
3.5V
3.0V
2.7V
2.5V
2.3V
0.1
0.01
0.001
0.1
2.3V
60μs PULSE WIDTH
Tj = 25°C
1 10 100
VDS, Drain-to-Source Voltage (V)
1000
Fig 1. Typical Output Characteristics
1000
100
10
TOP
BOTTOM
VGS
10V
5.0V
4.5V
3.5V
3.0V
2.7V
2.5V
2.3V
1
0.1
0.1
2.3V
60μs PULSE WIDTH
Tj = 150°C
1 10 100
VDS, Drain-to-Source Voltage (V)
1000
Fig 2. Typical Output Characteristics
1000
100
10 TJ = 150°C
2.0
ID = 14A
VGS = 10V
1.5
1
0.1
1
TJ = 25°C
VDS = 15V
60μs PULSE WIDTH
23456
VGS, Gate-to-Source Voltage (V)
1.0
0.5
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
Fig 3. Typical Transfer Characteristics
3 www.irf.com © 2013 International Rectifier
Fig 4. Normalized On-Resistance
vs. Temperature
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November 22, 2013


3Pages


IRF8714PBF-1 電子部品, 半導体
IRF8714PbF-1
25 300
ID = 14A
ID
250
TOP
0.82A
1.0A
20 BOTTOM 11A
200
15 150
TJ = 125°C
100
10
TJ = 25°C
50
5
3 4 5 6 7 8 9 10 11 12
VGS, Gate -to -Source Voltage (V)
Fig 12. On-Resistance vs. Gate Voltage
0
25 50 75 100 125 150
Starting TJ , Junction Temperature (°C)
Fig 13. Maximum Avalanche Energy
vs. Drain Current
V(BR)DSS
15V tp
VDS
L
RG
20V
tp
D.U.T
IAS
0.01Ω
DRIVER
+
-
VDD A
I AS
Fig 14. Unclamped Inductive Test Circuit
and Waveform
Id
0
Vgs
L
DUT
210KK S
VCC
Fig 15. Gate Charge Test Circuit
Vds
Vgs(th)
Qgodr
Qgd Qgs2 Qgs1
Fig 16. Gate Charge Waveform
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November 22, 2013

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部品番号部品説明メーカ
IRF8714PBF-1

Power MOSFET ( Transistor )

International Rectifier
International Rectifier


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