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PDF STGW30M65DF2 Data sheet ( Hoja de datos )
| Número de pieza | STGW30M65DF2 | |
| Descripción | Trench gate field-stop IGBT | |
| Fabricantes | STMicroelectronics | |
| Logotipo |  |
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STGW30M65DF2,
STGWA30M65DF2
Trench gate field-stop IGBT, M series 650 V, 30 A low loss
Datasheet - production data
Figure 1: Internal schematic diagram
Features
6 µs of minimum short-circuit withstand time
VCE(sat) = 1.55 V (typ.) @ IC = 50 A
Tight parameters distribution
Safer paralleling
Low thermal resistance
Soft and very fast recovery antiparallel diode
Applications
Motor control
UPS
PFC
Description plur
These devices are IGBTs developed using an
advanced proprietary trench gate field-stop
structure. These devices are part of the M series
of IGBTs, which represent an optimum
compromise in performance to maximize the
efficiency of inverter systems where low-loss and
short-circuit capability are essential. Furthermore,
a positive VCE(sat) temperature coefficient and tight
parameter distribution result in safer paralleling
operation.
Order code
STGW30M65DF2
STGWA30M65DF2
Table 1: Device summary
Marking
Package
G30M65DF2
TO-247
G30M65DF2
TO-247 long leads
Packaging
Tube
Tube
December 2015
DocID027768 Rev 3
This is information on a product in full production.
1/19
www.st.com
1 page  
STGW30M65DF2, STGWA30M65DF2
Electrical characteristics
Table 6: IGBT switching characteristics (inductive load)
Symbol Parameter
Test conditions
Min. Typ. Max. Unit
td(on)
Turn-on delay
time
31.6 -
ns
tr
Current rise
time
13.4 -
ns
(di/dt)on
Turn-on
current slope
1791 - A/µs
td(off)
tf
Eon(1)
Turn-off-delay
time
Current fall
time
Turn-on
switching
losses
VCE = 400 V, IC = 30 A, VGE = 15 V,
RG = 10 Ω (see Figure 29: " Test circuit for
inductive load switching" )
115 -
110 -
ns
ns
0.3 - mJ
Eoff(2)
Turn-off
switching
losses
0.96 - mJ
Ets
Total switching
losses
1.26 - mJ
td(on)
Turn-on delay
time
30 - ns
tr
Current rise
time
17 - ns
(di/dt)on
Turn-on
current slope
1435 - A/µs
td(off)
Turn-off-delay
time
VCE = 400 V, IC = 30 A, VGE = 15 V,
tf
Current fall
time
RG = 10 Ω TJ = 175 °C (see Figure 29: "
Test circuit for inductive load switching" )
Turn-on
Eon switching
losses
116 -
194 -
ns
ns
0.67 - mJ
Turn-off
Eoff switching
losses
1.36 - mJ
Ets
Total switching
losses
2.03 - mJ
tsc
Short-circuit
withstand time
VCC = 400 V, VGE = 13 V, TJstart = 150 °C
VCC = 400 V, VGE = 15 V, TJstart = 150 °C
10
6
-
µs
-
Notes:
(1)Energy losses include reverse recovery of the diode.
(2)Turn-off losses also include the tail of the collector current.
DocID027768 Rev 3
5/19
5 Page 
STGW30M65DF2, STGWA30M65DF2
Electrical characteristics
Figure 26: Reverse recovery energy vs. diode current slope
Err
(mJ)
0.38
GIPD100420151455FSR
IF = 30A, VCC = 400V,
VGE = 15V
0.34
0.3
0.26
TJ =175°C
0.22
0.18
200 600 1000 1400 1800 di/dt(A/µs)
Figure 27: Thermal impedance for IGBT
K
δ=0.5
ZthTO2T_B
0.2
0.1
1 0 -1
0.01
0.05
0.02
Zth=k Rthj-c
δ=tp/t
Single pulse
10 -2
1 0 -5
10 -4
1 0 -3
1 0 -2
tp
t
1 0 -1
tp(s)
DocID027768 Rev 3
11/19
11 Page | ||
| Páginas | Total 19 Páginas | |
| PDF Descargar | [ Datasheet STGW30M65DF2.PDF ] | |
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