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IRF7507PBFのメーカーはInternational Rectifierです、この部品の機能は「Power MOSFET ( Transistor )」です。 |
部品番号 | IRF7507PBF |
| |
部品説明 | Power MOSFET ( Transistor ) | ||
メーカ | International Rectifier | ||
ロゴ | |||
このページの下部にプレビューとIRF7507PBFダウンロード(pdfファイル)リンクがあります。 Total 8 pages
PD - 95218
IRF7507PbF
HEXFET® Power MOSFET
l Generation V Technology
l Ultra Low On-Resistance
l Dual N and P Channel MOSFET
l Very Small SOIC Package
l Low Profile (<1.1mm)
l Available in Tape & Reel
l Fast Switching
l Lead-Free
N-CHANNEL MOSFET
S1 1
8 D1
G1 2
7 D1
S2 3
6 D2
G2 4
5 D2
P-CHANNEL MOSFET
Top View
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced
processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device
design that HEXFET Power MOSFETs are well known for, provides the
designer with an extremely efficient and reliable device for use in a wide variety
of applications.
N-Ch P-Ch
VDSS 20V -20V
RDS(on) 0.135Ω 0.27Ω
The new Micro8 package, with half the footprint area of the standard SO-8,
provides the smallest footprint available in an SOIC outline. This makes the
Micro8 an ideal device for applications where printed circuit board space is at
a premium. The low profile (<1.1mm) of the Micro8 will allow it to fit easily into
extremely thin application environments such as portable electronics and
PCMCIA cards.
Micro8
Absolute Maximum Ratings
Parameter
VDS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
VGS
VGSM
dv/dt
TJ , TSTG
Drain-Source Voltage
Continuous Drain Current, VGS
Continuous Drain Current, VGS
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Gate-to-Source Voltage Single Pulse tp<10µS
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
Parameter
RθJA
Maximum Junction-to-Ambient
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Max.
N-Channel
P-Channel
20 -20
2.4 -1.7
1.9 -1.4
19 -14
1.25
0.8
10
± 12
16
5.0 -5.0
-55 to + 150
240 (1.6mm from case)
Units
V
A
W
W
mW/°C
V
V
V/ns
°C
Max.
100
Units
°C/W
1
5/11/04
1 Page 100
10
VGS
TOP 7.5V
5.0V
4.0V
3.5V
3.0V
2.5V
2.0V
BOTTOM 1.5V
N - Channel
IRF7507PbF
100
10
VGS
TOP 7.5V
5.0V
4.0V
3.5V
3.0V
2.5V
2.0V
BOTTOM 1.5V
1
0.1
0.01
0.1
1.5V
20µs PULSE WIDTH
TJ = 25°C
A
1 10
VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
100
1
1.5V
0.1
0.01
0.1
20µs PULSE WIDTH
TJ = 150°C
A
1 10
VDS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
100
10
TJ = 150°C
TJ = 25°C
1
0.1
1.5
VDS = 10V
20µs PULSE WIDTH
2.0 2.5 3.0 3.5 4.0A
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
2.0 ID = 1.7A
1.5
1.0
0.5
0.0
-60
-40 -20 0
VGS = 4.5V A
20 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
Fig 5. Normalized On-Resistance
Vs. Temperature
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10
TJ = 150°C
1 TJ = 25°C
0.1
0.4
VGS = 0V A
0.6 0.8 1.0 1.2 1.4 1.6 1.8
VSD , Source-to-Drain Voltage (V)
Fig 4. Typical Source-Drain Diode
Forward Voltage
0.8
0.6
0.4
0.2 VGS = 2.5V
VGS = 5.0V
0.0
0
2
4
ID , Drain Current (A)
A
6
Fig 6. Typical On-Resistance Vs. Drain
Current
3
3Pages IRF7507PbF
0.300
0.250
0.200
ID = -1.7A
0.150
0.100
2
345678
-VGS , Gate-to-Source Voltage (V)
P - Channel
100
OPERATION IN THIS AREA LIMITED
BY RDS(on)
10
100us
1ms
1
10ms
TC = 25 °C
TJ = 150 °C
Single Pulse
0.1
1
10
-VDS, Drain-to-Source Voltage (V)
100
Fig 17. Typical On-Resistance Vs. Gate
Voltage
500
VGS = 0V,
f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
400 Coss = Cds + C gd
Ciss
300
Coss
Fig 18. Maximum Safe Operating Area
10 I D = -1.2A
VDS = -16V
8
6
200
Crss
100
0A
1 10 100
-VDS , Drain-to-Source Voltage (V)
Fig 19. Typical Capacitance Vs.
Drain-to-Source Voltage
1000
N-P - Channel
4
2
FOR TEST CIRCUIT
0 SEE FIGURE 19 A
0 2 4 6 8 10
QG , Total Gate Charge (nC)
Fig 20. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
D = 0.50
0.20
10 0.10
0.05
0.02
0.01
1
0.1
0.00001
SINGLE PULSE
(THERMAL RESPONSE)
0.0001
0.001
PDM
t1
t2
Notes:
1. Duty factor D = t1 / t 2
2. Peak T J = P DM x Z thJA + TA
0.01 0.1
t1, Rectangular Pulse Duration (sec)
1
10
100
Fig 21. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
6 www.irf.com
6 Page | |||
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部品番号 | 部品説明 | メーカ |
IRF7507PBF | Power MOSFET ( Transistor ) | International Rectifier |