DataSheet.jp

IRF7493PBF-1 の電気的特性と機能

IRF7493PBF-1のメーカーはInternational Rectifierです、この部品の機能は「Power MOSFET ( Transistor )」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRF7493PBF-1
部品説明 Power MOSFET ( Transistor )
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




このページの下部にプレビューとIRF7493PBF-1ダウンロード(pdfファイル)リンクがあります。

Total 9 pages

No Preview Available !

IRF7493PBF-1 Datasheet, IRF7493PBF-1 PDF,ピン配置, 機能
VDS
RDS(on) max
(@VGS = 10V)
Qg (typical)
ID
(@TA = 25°C)
80 V
15 mΩ
35 nC
9.3 A
IRF7493PbF-1
HEXFET® Power MOSFET
S1
S2
S3
G4
AA
8D
7D
6D
5D
Top View
SO-8
Features
Industry-standard pinout SO-8 Package
Compatible with Existing Surface Mount Techniques
RoHS Compliant, Halogen-Free
MSL1, Industrial qualification
Benefits
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Base Part Number Package Type
IRF7493PbF-1
SO-8
Standard Pack
Form
Quantity
Tube/Bulk
95
Tape and Reel
4000
Orderable Part Number
IRF7493PbF-1
IRF7493TRPbF-1
Absolute Maximum Ratings
Parameter
VDS
VGS
ID @ TA = 25°C
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
Continuous Drain Current, VGS @ 10V
cPulsed Drain Current
fPower Dissipation
fPower Dissipation
Linear Derating Factor
TJ Operating Junction and
TSTG
Storage Temperature Range
Thermal Resistance
RθJL Junction-to-Lead
fRθJA
Junction-to-Ambient
Parameter
Max.
80
± 20
9.3
7.4
74
2.5
1.6
0.02
-55 to +150
Units
V
A
W
W /°C
°C
Typ.
–––
–––
Max.
20
50
Units
°C/W
Notes  through … are on page 9
1 www.irf.com © 2014 International Rectifier
Submit Datasheet Feedback
June 23, 2014

1 Page





IRF7493PBF-1 pdf, ピン配列
IRF7493PbF-1
100 VGS
TOP 15V
10V
8.0V
5.5V
10 5.0V
4.5V
4.0V
BOTTOM 3.5V
1
3.5V
0.1
0.01
0.1
20μs PULSE WIDTH
Tj = 25°C
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 1. Typical Output Characteristics
100 VGS
TOP 15V
10V
8.0V
5.5V
5.0V
10
4.5V
4.0V
BOTTOM 3.5V
3.5V
1
0.1
0.1
20μs PULSE WIDTH
Tj = 150°C
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 2. Typical Output Characteristics
100.00
10.00
TJ = 150°C
2.0
ID = 9.3A
VGS = 10V
1.5
TJ = 25°C
1.00
1.0
0.10
3.0
VDS = 25V
20μs PULSE WIDTH
4.0 5.0
VGS, Gate-to-Source Voltage (V)
6.0
0.5
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
Fig 3. Typical Transfer Characteristics
3 www.irf.com © 2014 International Rectifier
Fig 4. Normalized On-Resistance
Vs. Temperature
Submit Datasheet Feedback
June 23, 2014


3Pages


IRF7493PBF-1 電子部品, 半導体
IRF7493PbF-1
0.013
0.030
0.012
VGS = 10V
0.020
ID = 5.6A
0.011
0
20 40 60
ID , Drain Current (A)
80
Fig 12. On-Resistance Vs. Drain Current
Current Regulator
Same Type as D.U.T.
50KΩ
12V .2μF
.3μF
VGS
3mA
D.U.T.
+
-VDS
VGS
QGS
VG
IG ID
Current Sampling Resistors
QG
QGD
Charge
0.010
4.0
8.0 12.0
VGS, Gate -to -Source Voltage (V)
16.0
Fig 13. On-Resistance Vs. Gate Voltage
500
ID
TOP
2.5A
4.5A
400 BOTTOM 5.6A
Fig 14a&b. Basic Gate Charge Test Circuit
and Waveform
300
200
V(BR)DSS
tp
I AS
VDS
L
RG
20V
tp
D.U.T
IAS
0.01Ω
15V
DRIVER
+
-
VDD
A
100
0
25
50 75 100 125
Starting TJ, Junction Temperature (°C)
150
Fig 15a&b. Unclamped Inductive Test circuit
and Waveforms
Fig 15c. Maximum Avalanche Energy
Vs. Drain Current
6 www.irf.com © 2014 International Rectifier
Submit Datasheet Feedback
June 23, 2014

6 Page



ページ 合計 : 9 ページ
 
PDF
ダウンロード
[ IRF7493PBF-1 データシート.PDF ]


データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。


共有リンク

Link :


部品番号部品説明メーカ
IRF7493PBF-1

Power MOSFET ( Transistor )

International Rectifier
International Rectifier


www.DataSheet.jp    |   2020   |  メール    |   最新    |   Sitemap