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IRF7469PBF-1 の電気的特性と機能

IRF7469PBF-1のメーカーはInternational Rectifierです、この部品の機能は「Power MOSFET ( Transistor )」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRF7469PBF-1
部品説明 Power MOSFET ( Transistor )
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




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IRF7469PBF-1 Datasheet, IRF7469PBF-1 PDF,ピン配置, 機能
VDS
RDS(on) max
(@VGS = 10V)
RDS(on) max
(@VGS = 4.5V)
Qg (typical)
ID
(@TA = 25°C)
40 V
17
mΩ
21
15 nC
9.0 A
IRF7469PbF-1
HEXFET® Power MOSFET
S1
S2
S3
G4
AA
8D
7D
6D
5D
Top View
SO-8
Features
Industry-standard pinout SO-8 Package
Compatible with Existing Surface Mount Techniques
RoHS Compliant, Halogen-Free
MSL1, Industrial qualification
Benefits
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Base Part Number Package Type
IRF7469PbF-1
SO-8
Standard Pack
Form
Quantity
Tube/Bulk
95
Tape and Reel
4000
Orderable Part Number
IRF7469PbF-1
IRF7469TRPbF-1
Absolute Maximum Ratings
Symbol
VDS
VGS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
TJ , TSTG
Parameter
Drain-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Maximum Power Dissipationƒ
Maximum Power Dissipationƒ
Linear Derating Factor
Junction and Storage Temperature Range
Max.
40
± 20
9.0
7.3
73
2.5
1.6
0.02
-55 to + 150
Units
V
V
A
W
W
mW/°C
°C
Thermal Resistance
Symbol
RθJL
RθJA
Parameter
Junction-to-Drain Lead
Junction-to-Ambient „
Notes  through „ are on page 8
1 www.irf.com © 2014 International Rectifier
Typ.
–––
–––
Submit Datasheet Feedback
Max.
20
50
Units
°C/W
June 23, 2014

1 Page





IRF7469PBF-1 pdf, ピン配列
IRF7469PbF-1
100
VGS
TOP 10V
8.0V
7.0V
5.0V
4.5V
4.0V
3.7V
BOTTOM 3.5V
100
VGS
TOP 10V
8.0V
7.0V
5.0V
4.5V
4.0V
3.7V
BOTTOM 3.5V
3.5V
10
0.1
20μs PULSE WIDTH
TJ= 25 °C
1 10
VDS , Drain-to-Source Voltage (V)
100
Fig 1. Typical Output Characteristics
3.5V
10
0.1
20μs PULSE WIDTH
TJ= 150 °C
1 10
VDS , Drain-to-Source Voltage (V)
100
Fig 2. Typical Output Characteristics
100
TJ = 150° C
2.5 ID = 9.0A
2.0
1.5
TJ = 25° C
1.0
10
3.5
V DS= 25V
20μs PULSE WIDTH
4.0
VGS, Gate-to-Source Voltage (V)
4.5
0.5
0.0 VGS = 10V
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ, Junction Temperature ( °C)
Fig 3. Typical Transfer Characteristics
3 www.irf.com © 2014 International Rectifier
Fig 4. Normalized On-Resistance
Vs. Temperature
Submit Datasheet Feedback
June 23, 2014


3Pages


IRF7469PBF-1 電子部品, 半導体
IRF7469PbF-1
0.03
0.03
VGS = 4.5V
0.02
0.02
ID = 9.0A
VGS = 10V
0.01
0
20 40 60
ID , Drain Current (A)
80
Fig 12. On-Resistance Vs. Drain Current
Current Regulator
Same Type as D.U.T.
50KΩ
12V .2μF
.3μF
VGS
3mA
D.U.T.
+
-VDS
VGS
QGS
VG
IG ID
Current Sampling Resistors
QG
QGD
Charge
Fig 13a&b. Basic Gate Charge Test Circuit
and Waveform
0.01
3.0
4.0 5.0 6.0 7.0 8.0 9.0
VGS, Gate -to -Source Voltage (V)
10.0
Fig 13. On-Resistance Vs. Gate Voltage
500 ID
TOP
3.2A
5.8A
400 BOTTOM 7.2A
300
200
V(BR)DSS
tp
I AS
VDS
L
RG
20V
tp
D.U.T
IAS
0.01Ω
15V
DRIVER
+
-
VDD
A
100
0
25 50 75 100 125 150
Starting TJ , Junction Temperature ( °C)
Fig 14a&b. Unclamped Inductive Test circuit
and Waveforms
Fig 14c. Maximum Avalanche Energy
Vs. Drain Current
6 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback
June 23, 2014

6 Page



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部品番号部品説明メーカ
IRF7469PBF-1

Power MOSFET ( Transistor )

International Rectifier
International Rectifier


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