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IRF7416PBF-1のメーカーはInternational Rectifierです、この部品の機能は「Power MOSFET ( Transistor )」です。 |
部品番号 | IRF7416PBF-1 |
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部品説明 | Power MOSFET ( Transistor ) | ||
メーカ | International Rectifier | ||
ロゴ | |||
このページの下部にプレビューとIRF7416PBF-1ダウンロード(pdfファイル)リンクがあります。 Total 9 pages
VDS
RDS(on) max
(@VGS = -10V)
Qg (typical)
ID
(@TA = 25°C)
-30
0.020
61
-10
V
Ω
nC
A
IRF7416PbF-1
HEXFET® Power MOSFET
S1
S2
S3
G4
8
A
D
7D
6D
5D
Top View
SO-8
Features
Industry-standard pinout SO-8 Package
Compatible with Existing Surface Mount Techniques
RoHS Compliant, Halogen-Free
MSL1, Industrial qualification
Benefits
⇒ Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Base Part Number
IRF7416PbF-1
Package Type
SO-8
Standard Pack
Form
Tube/Bulk
Tape and Reel
Quantity
95
4000
Orderable Part Number
IRF7416PbF-1
IRF7416TRPbF-1
Absolute Maximum Ratings
Parameter
ID @ TA = 25°C
ID @ TA = 70°C
IDM
Continuous Drain Current, VGS @ -10V
Continuous Drain Current, VGS @ -10V
cPulsed Drain Current
PD @TA = 25°C
Power Dissipation
Linear Derating Factor
VGS
EAS
dv/dt
Gate-to-Source Voltage
dSingle Pulse Avalanche Energy
ePeak Diode Recovery dv/dt
TJ Operating Junction and
TSTG
Storage Temperature Range
Thermal Resistance
Parameter
gRθJA Junction-to-Ambient
Max.
-10
-7.1
-45
2.5
0.02
± 20
370
-5.0
-55 to + 150
Max.
50
Units
A
W
W/°C
V
mJ
V/ns
°C
Units
°C/W
1 www.irf.com © 2013 International Rectifier Submit Datasheet Feedback
November 19, 2013
1 Page IRF7416PbF-1
100 VGS
TOP - 15V
- 10V
- 7.0V
- 5.5V
- 4.5V
- 4.0V
- 3.5V
BOTTOM - 3.0V
10
-3.0V
20μs PULSE WIDTH
1
TJ = 25°C
A
0.1 1 10
-VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
100 VGS
TOP - 15V
- 10V
- 7.0V
- 5.5V
- 4.5V
- 4.0V
- 3.5V
BOTTOM - 3.0V
10
-3.0V
20μs PULSE WIDTH
1
TJ = 150°C
A
0.1 1 10
-VDS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
100
TJ = 25°C
TJ = 150°C
10
2.0 ID = -5.6A
1.5
1.0
0.5
VDS = -10V
1
3.0
3.5
20μs PULSE WIDTH
4.0 4.5 5.0 5.5A
-VGS , Gate-to-Source Voltage (V)
0.0
-60
-40 -20 0
VGS = -10V A
20 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
Fig 3. Typical Transfer Characteristics
3 www.irf.com © 2013 International Rectifier
Fig 4. Normalized On-Resistance
Vs. Temperature
Submit Datasheet Feedback
November 19, 2013
3Pages VDS
L
RG
-20V
tp
D.U.T
IAS
0.01Ω
DRIVER
VDD
A
15V
Fig 12a. Unclamped Inductive Test Circuit
IAS
tp
V(BR)DSS
Fig 12b. Unclamped Inductive Waveforms
IRF7416PbF-1
1000
800
ID
TOP
-2.5A
-4.5A
BOTTOM -5.6A
600
400
200
0
25 50 75 100 125 150
Starting TJ, Junction Temperature (oC)
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
6 www.irf.com © 2013 International Rectifier Submit Datasheet Feedback
November 19, 2013
6 Page | |||
ページ | 合計 : 9 ページ | ||
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PDF ダウンロード | [ IRF7416PBF-1 データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
IRF7416PBF-1 | Power MOSFET ( Transistor ) | International Rectifier |