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IRF7401PBFのメーカーはInternational Rectifierです、この部品の機能は「Power MOSFET ( Transistor )」です。 |
部品番号 | IRF7401PBF |
| |
部品説明 | Power MOSFET ( Transistor ) | ||
メーカ | International Rectifier | ||
ロゴ | |||
このページの下部にプレビューとIRF7401PBFダウンロード(pdfファイル)リンクがあります。 Total 9 pages
l Generation V Technology
l Ultra Low On-Resistance
l N-Channel Mosfet
l Surface Mount
l Available in Tape & Reel
l Dynamic dv/dt Rating
l Fast Switching
l Lead-Free
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve the
lowest possible on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient device for use in a wide
variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infra red, or wave soldering techniques.
Power dissipation of greater than 0.8W is possible in
a typical PCB mount application.
PD - 95724
IRF7401PbF
HEXFET® Power MOSFET
S1
S2
S3
G4
AA
8D
7D
6D
5D
Top View
VDSS = 20V
RDS(on) = 0.022Ω
SO-8
Absolute Maximum Ratings
ID @ TA = 25°C
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
VGS
dv/dt
TJ, TSTG
Parameter
10 Sec. Pulsed Drain Current, VGS @ 4.5V
Continuous Drain Current, VGS @ 4.5V
Continuous Drain Current, VGS @ 4.5V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
Max.
10
8.7
7.0
35
2.5
0.02
± 12
5.0
-55 to + 150
Units
A
W
W/°C
V
V/ns
°C
Thermal Resistance Ratings
RθJA
Parameter
Maximum Junction-to-Ambient
Typ.
Max.
50
Units
°C/W
8/10/04
1 Page 1000
100
VGS
TOP
7.5V
5.0V
4.0V
3.5V
3.0V
2.5V
2.0V
BOTTOM 1.5V
IRF7401PbF
1000
100
VGS
TOP
7.5V
5.0V
4.0V
3.5V
3.0V
2.5V
2.0V
BOTTOM 1.5V
10
1.5V 20µs PULSE WIDTH
1
TA = 25°C
A
0.1 1 10 100
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
10
1.5V
20µs PULSE WIDTH
1
TJ = 150°C
A
0.1 1 10 100
VDS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
1000
TJ = 25°C
100
TJ = 150°C
10
VDS = 15V
20µs PULSE WIDTH
1A
1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
2.0
ID = 6.9A
1.5
1.0
0.5
0.0
VGS = 4.5V
A
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3Pages IRF7401PbF
4.5V
QGS
VG
QG
QGD
Charge
Fig 12a. Basic Gate Charge Waveform
Current Regulator
Same Type as D.U.T.
50KΩ
12V .2µF
.3µF
+
D.U.T. -VDS
VGS
3mA
IG ID
Current Sampling Resistors
Fig 12b. Gate Charge Test Circuit
6 Page | |||
ページ | 合計 : 9 ページ | ||
|
PDF ダウンロード | [ IRF7401PBF データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
IRF7401PBF | Power MOSFET ( Transistor ) | International Rectifier |
IRF7401PBF-1 | Power MOSFET ( Transistor ) | International Rectifier |