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PDF IRF7328PBF Data sheet ( Hoja de datos )
| Número de pieza | IRF7328PBF | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de IRF7328PBF (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
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lÿÿTrench Technology
lÿÿUltra Low On-Resistance
lÿ Dual P-Channel MOSFET
lÿAvailable in Tape & Reel
lÿ Lead-Free
VDSS
-30V
PD - 95196A
IRF7328PbF
HEXFET® Power MOSFET
RDS(on) max
21mΩ@VGS = -10V
32mΩ@VGS = -4.5V
ID
-8.0A
-6.8A
Description
New trench HEXFET® Power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance
per silicon area. This benefit, combined with the
ruggedized device design that HEXFET power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in battery and load management applications.
S1 1
G1 2
S2 3
G2 4
8 D1
7 D1
6 D2
5 D2
Top View
SO-8
Absolute Maximum Ratings
Parameter
VDS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
Drain-Source Voltage
Continuous Drain Current, VGS @ -10V
Continuous Drain Current, VGS @ -10V
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
VGS
TJ , TSTG
Gate-to-Source Voltage
Junction and Storage Temperature Range
Thermal Resistance
Parameter
RθJA
Maximum Junction-to-Ambient
www.irf.com
Max.
-30
-8.0
-6.4
-32
2.0
1.3
16
± 20
-55 to + 150
Units
V
A
W
W
mW/°C
V
°C
Max.
62.5
Units
°C/W
1
12/03/10
1 page  
IRF7328PbF
10.0
8.0
6.0
4.0
2.0
0.0
25
50 75 100 125
TTCA , Case Temperature ( °C)
150
Fig 9. Maximum Drain Current Vs.
Case Temperature
1000
VDS
VGS
RG
RD
D.U.T.
-
+ VDD
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
VGS
10%
td(on) tr
td(off) tf
90%
VDS
Fig 10b. Switching Time Waveforms
100
D = 0.50
0.20
10 0.10
0.05
0.02
1 0.01
0.1
0.0001
SINGLE PULSE
(THERMAL RESPONSE)
0.001
0.01
PDM
t1
t2
Notes:
1. Duty factor D = t1 / t 2
2. Peak TJ = P DM x ZthJA + TA
0.1 1 10
t1 , Rectangular Pulse Duration (sec)
100
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
www.irf.com
1000
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet IRF7328PBF.PDF ] | |
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