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PDF 1N6509 Data sheet ( Hoja de datos )
| Número de pieza | 1N6509 | |
| Descripción | MONOLITHIC AIR ISOLATED DIODE ARRAY | |
| Fabricantes | Microsemi Corporation | |
| Logotipo |  |
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A Microsemi Company
580 Pleasant St.
Watertown, MA 02472
1N6509
Phone: 617-924-9280
Fax: 617-924-1235
DIODE ARRAY PRODUCT SPECIFICATION
MONOLITHIC AIR ISOLATED
DIODE ARRAY
FEATURES:
• HERMETIC CERAMIC PACKAGE
• Bv > 60V at 10uA
• Ir < 100nA at 40V
• C < 8.0 pF
Absolute Maximum Ratings:
Symbol
Parameter
Limit Unit
VBR(R) *1 *2 Reverse Breakdown Voltage
IO *1 * 3 Continuous Forward Current
IFSM *1 Peak Surge Current (tp= 1/120 s)
PT1 *4 Power Dissipation per Junction @ 25°C
PT2 *4 Power Dissipation per Package @ 25°C
Top Operating Junction Temperature Range
Tstg Storage Temperature Range
60 Vdc
300 mAdc
500 mAdc
400 mW
600 mW
-65 to +150 °C
-65 to +200 °C
NOTE 1: Each Diode
NOTE 2: Pulsed: PW = 100ms max.; duty cycle < 20%
NOTE 3: Derate at 2.4mA/°C above +25 °C
NOTE 4: Derate at 4.0mW/°C above +25 °C
Electrical Characteristics (Per Diode) @
25°C unless otherwise specified
10
9
5
84
12
11
3
12
7
14
.200
.125
.023
.014
.070
.030
.200
MAX
.785
MAX
.100
BSC
.060
.015
.320
.290
.310
.220
.005
MIN
.098
MAX
O-15
.015
.008
PACKAGE OUTLINE
Symbol Parameter
Conditions
Min Max Unit
Vf1 Forward Voltage
If = 100mAdc *1
Vf2 Forward Voltage
If = 500mAdc *1
IR1 Reverse Current
VR = 40 Vdc
Ct Capacitance (pin to pin) VR = 0 Vdc; f = 1 MHz
tfr Forward Recovery Time If = 500mAdc
trr Reverse Recovery Time If = IR = 200mAdc, irr = 20mAdc, RL = 100 ohms
1 Vdc
1.5 Vdc
0.1 uAdc
8.0 pF
40 ns
20 ns
NOTE 1: Pulsed: PW = 300us +/- 50us, duty cycle < 2%, 90us after leading edge
Sertech reserves the right to make changes to any product design, specification or other
information at any time without prior notice.
MSC1020.PDF Rev - 11/25/98
1 page | ||
| Páginas | Total 1 Páginas | |
| PDF Descargar | [ Datasheet 1N6509.PDF ] | |
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