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Datasheet 1N6491US Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | 1N6491US | 1.5 WATT ZENER DIODES • AVAILABLE IN JAN, JANTX, JANTXV AND JANS PER MIL-PRF-19500/406 • 1.5 WATT ZENER DIODES • NON CAVITY CONSTRUCTION • METALLURGICALLY BONDED
1N6485US THRU 1N6491US AND 1N4460US AND 1N4461US
MAXIMUM RATINGS
Operating Temperature: -65°C to +175°C Storage Temperature: -65°C to +200°C Power | Compensated Deuices Incorporated | diode |
1N6 Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | 1N60 | Diode, Rectifier American Microsemiconductor diode | | |
2 | 1N60 | GOLD BONDED GERMANIUM DIODE ETC diode | | |
3 | 1N60 | GOLD BONDED GERMANIUM DIODE ETC diode | | |
4 | 1N60 | Zender Diodes American Microsemiconductor diode | | |
5 | 1N60 | Germanium Glass Diodes International Semiconductor diode | | |
6 | 1N60 | Germanium Glass Diodes Central Semiconductor diode | | |
7 | 1N60 | Schottky Barrier Diode FMS
1N60/1N60P
Schottky Barrier Diode
Features
1. High reliability 2. Low reverse current and low forward voltage
Applications
Low current rectification and high speed switching
Construction
Silicon epitaxial planar
Absolute Maximum Ratings
Tj=25 Parameter Repetitive peak reverse voltage Peak f Formosa MS diode | |
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Número de pieza | Descripción | Fabricantes | |
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