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Número de pieza | 1N646-1 | |
Descripción | Silicon Switching Diode DO-35 Glass Package | |
Fabricantes | Microsemi Corporation | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de 1N646-1 (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
No Preview Available ! Silicon Rectifier Diodes 1N645 to 649
or
Use Advantages 1N645-1 to 649-1
DO-35 Glass Package
Used as a general purpose rectifier in power supplies, or for clipping and
steering applications.
High performance alternative to small signal diodes where space does not
permit use of power rectifiers.
May be used in hostile environments where hermeticity and reliability are
important i.e. (Military and Aero/Space). MIL-S- 19500/ 240 approvals.
Available up to JANTXV-1 level.
"S" level screening capability to Source Control Drawings.
Features
Six Sigma quality
Humidity proof glass
Metallurgically bonded
DO -35 G lass Package
Lead Dia.
0.018-0.022"
0.458-0.558 mm
Thermally matched system
No thermal fatigue
High surge capability
1.0"
25.4 m m
(M in.)
Length
0.120-.200"
3.05 -5 .08- mm
D ia .
0 .0 6 -0 .0 9 "
1.53-2.28 mm
Sigma Bond™ plated contacts
100% guaranteed solderability
(DO-213AA) SMD MELF commercial (LL) and MIL (UR-1) types available
Absolute Maximum Ratings
Symbol
Value
Unit
Power Dissipation at 3/8" from the body, TL= 75 oC
Average Forward Rectified Current at TL = 75 oC
Operating and Storage Temperature Range
Thermal Impedance
Detail Specifications
Ptot
IAV
TO&S
ZqJX
600
400
-65 to 175
35
mWatts
mAmps
oC
oC/W
Type
Reverse
Voltage
(VR)
Volts
Breakdown
Voltage
(MIN.)
@ 100µA
(BV)
Volts
Maximum
Forward
Maximum
Average Rectified Current Voltage Reverse Leakage Current
_______________
Drop
_______________
(IO)
25° C
(IO) (VF) @ IF = 400mA
(IR) @ VR
150° C (MIN.)
(MAX.) 25° C
100° C
Amps
Amps
Volts
µA
µA
1N645,-1
225
275
0.4
0.15
1N646,-1
300
360
0.4
0.15
1N647,-1
400
480
0.4
0.15
1N648,-1
500
600
0.4
0.15
1N649,-1
600
720
0.4
0.15
1.0 0.2
1.0 0.2
1.0 0.2
1.0 0.2
1.0 0.2
15
15
20
20
25
Note 1: Surge Current @TA = +25° C to +150° C, for 1 Second
Maximum Typical
Surge Junction
Current Capacitance
(IFSM)
(NOTE 1)
@ -12V
(CO)
Amps pF
39
39
39
39
39
For MELF DO-213AA surface mount package, replace "1N" prefix with "LL" for commercial.
6 Lake Street - Lawrence, MA 01841
Tel: 978-681-0392 - Fax: 978-681-9135
1 page |
Páginas | Total 3 Páginas | |
PDF Descargar | [ Datasheet 1N646-1.PDF ] |
Número de pieza | Descripción | Fabricantes |
1N646-1 | Silicon Switching Diode DO-35 Glass Package | Microsemi Corporation |
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