(PDF) 1N645-1 Datasheet - SILICON RECTIFIER

Número de pieza	1N645-1
Descripción	SILICON RECTIFIER
Fabricantes	Compensated Deuices Incorporated
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No Preview Available ! • AVAILABLE IN JAN, JANTX, AND JANTXV PER MIL-PRF-19500/240 • SILICON RECTIFIER • METALLURGICALLY BONDED MAXIMUM RATINGS Operating Temperature: -65°C to +175°C Storage Temperature: -65°C to +175°C Operating Current: 400 mA @ 25°C 150 mA @ 150°C Derating: 2.0 mA/°C From 25°C to 150°C 6.0 mA/°C From 150°C to 175°C ELECTRICAL CHARACTERISTICS @ 25°C, unless otherwise specified TYPE 1N645-1 VRSM V (pk) 270 V RWM V (pk) 225 I FSM TP = 1/120 s TA = 25°C A 5 VF @400mA V DC 0.8 - 1.0 CAP @ V R = 4V pF 20 TYPE 1N645-1 I R1 at V RWM I R2 at V RWM I R3 at V RSM TA = 25°C TA = 150°C TA = 25°C µA µA µA 0.05 25 50 1N645-1 FIGURE 1 DESIGN DATA CASE: Hermetically sealed glass case. DO – 35 outline. LEAD MATERIAL: Copper clad steel. LEAD FINISH: Tin / Lead THERMAL RESISTANCE: (ROJEC): 250 ˚C/W maximum THERMAL IMPEDANCE: ˚C/W maximum (ZOJX): 35 POLARITY: Cathode end is banded. MOUNTING POSITION: ANY. 22 COREY STREET, MELROSE, MASSACHUSETTS 02176 PHONE (781) 665-1071 FAX (781) 665-7379 WEBSITE: http://www.cdi-diodes.com E-mail: [email protected] 1 page

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PDF 1N645-1 Data sheet ( Hoja de datos )