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2SB1412 PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 2SB1412
部品説明 SILICON PNP TRANSISTOR
メーカ LZG
ロゴ LZG ロゴ 

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2SB1412 Datasheet, 2SB1412 PDF,ピン配置, 機能
2SB1412(3CA1412)
硅 PNP 半导体三极管/SILICON PNP TRANSISTOR
用途:用于中功率放大。
Purpose: Medium power amplifier applications.
特点:饱和压降低,极好的直流电流增益特性,与 2SD2118(3DG2118)互补。
Features: Low VCE(sat),excellent DC current gain characteristics, complements the 2SD2118(3DG2118).
极限参数/Absolute maximum ratings(Ta=25℃)
参数符号
Symbol
数值
Rating
单位
Unit
VCBO -30 V
VCEO -20 V
VEBO
-6.0
V
IC -5 A
ICM -10 A
PC 1.0 W
*PC (Tc=25℃)
10 W
Tj 150 ℃
Tstg -55~150
*mounted On40×40×0.7mm ceramic board.
*贴装于 40×40×0.7mm 的陶瓷板上。
电性能参数/Electrical characteristics(Ta=25℃)
参数符号
Symbol
测试条件
Test condition
VCBO IC=-50μA
IE=0
VCEO IC=-1.0mA
IB=0
VEBO IE=-50μA
IC=0
ICBO VCB=-20V
IE=0
IEBO VEB=-5.0V
IC=0
hFE VCE=-2.0V
IC=-0.5A
V* CE(sat)
IC=-4.0A
IB=-0.1A
fT VCE=-6.0V IC=-50mA f=30MHz
Cob VCB=-20V IE=0
*:measured using pulse current.
*:脉冲测试
f=1.0MHz
最小值
Min
-30
-20
-6.0
82
数值
Rating
典型值
Typ
120
60
最大值
Max
-0.5
-0.5
390
-1.0
hFE 分档/hFE Classifications:P: 82~180 Q: 120~270 R: 180~390
单位
Unit
V
V
V
μA
μA
V
MHz
pF
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