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G4PC50K の電気的特性と機能

G4PC50KのメーカーはInternational Rectifierです、この部品の機能は「IRG4PC50K」です。


製品の詳細 ( Datasheet PDF )

部品番号 G4PC50K
部品説明 IRG4PC50K
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




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G4PC50K Datasheet, G4PC50K PDF,ピン配置, 機能
PD - 91583B
INSULATED GATE BIPOLAR TRANSISTOR
Features
High short circuit rating optimized for motor control,
tsc =10µs, @360V VCE (start), TJ = 125°C,
VGE = 15V
Combines low conduction losses with high
switching speed
Latest generation design provides tighter parameter
distribution and higher efficiency than previous
generations
IRG4PC50K
Short Circuit Rated
UltraFast IGBT
C
VCES = 600V
G
E
n-channel
VCE(on) typ. = 1.84V
@VGE = 15V, IC = 30A
Benefits
As a Freewheeling Diode we recommend our
HEXFREDTM ultrafast, ultrasoft recovery diodes for
minimum EMI / Noise and switching losses in the
Diode and IGBT
Latest generation 4 IGBTs offer highest power
density motor controls possible
This part replaces the IRGPC50K and IRGPC50M
devices
Absolute Maximum Ratings
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
tsc
VGE
EARV
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current Q
Clamped Inductive Load Current R
Short Circuit Withstand Time
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy S
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting torque, 6-32 or M3 screw.
Thermal Resistance
RθJC
RθCS
RθJA
Wt
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient, typical socket mount
Weight
www.irf.com
TO-247AC
Max.
600
52
30
104
104
10
±20
170
200
78
-55 to +150
300 (0.063 in. (1.6mm) from case)
10 lbf•in (1.1N•m)
Units
V
A
µs
V
mJ
W
°C
Typ.
–––
0.24
–––
6 (0.21)
Max.
0.64
–––
40
–––
Units
°C/W
g (oz)
1
4/15/2000

1 Page





G4PC50K pdf, ピン配列
IRG4PC50K
70
60
50
40
S qu are wave:
6 0 % o f ra t e d
30 voltag e
I
20
10 Ideal diodes
0
0.1
For both:
Duty cycle: 50%
TJ = 1 25 °C
Tsink = 90°C
G ate d rive as s p ecified
Pow er D iss ip ation = 4 0W
1 10
f, Frequency (kHz)
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
Tria ng ula r wave:
C lam p v olta ge:
80 % o f ra te d
A
100
1000
1000
100 TJ = 25 °C
TJ = 150 °C
10
VGE = 15V
20µs PULSE WIDTH
1
1 10
VCE, Collector-to-Emitter Voltage (V)
Fig. 2 - Typical Output Characteristics
www.irf.com
100
TJ = 150 °C
10
TJ = 25 °C
V CC = 50V
5µs PULSE WIDTH
1
5 6 7 8 9 10 11 12
VGE, Gate-to-Emitter Voltage (V)
Fig. 3 - Typical Transfer Characteristics
3


3Pages


G4PC50K 電子部品, 半導体
IRG4PC50K
8.0 RG = 55..00Ohm
T J = 150 °C
VCC = 480V
VGE = 15V
6.0
1000 VGE = 20V
T J = 125 oC
4.0 100
2.0
0.0
10
20 30 40 50
I C , Collector-to-emitter Current (A)
60
Fig. 11 - Typical Switching Losses vs.
Collector-to-Emitter Current
SAFE OPERATING AREA
10
1 10 100
1000
VCE , Collector-to-Emitter Voltage (V)
Fig. 12 - Turn-Off SOA
6 www.irf.com

6 Page



ページ 合計 : 8 ページ
 
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共有リンク

Link :


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