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2SC5843 PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 2SC5843
部品説明 NPN SiGe RF TRANSISTOR
メーカ NEC
ロゴ NEC ロゴ 

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2SC5843 Datasheet, 2SC5843 PDF,ピン配置, 機能
DATA SHEET
NPN SILICON GERMANIUM RF TRANSISTOR
2SC5843
NPN SiGe RF TRANSISTOR FOR
LOW NOISE, HIGH-GAIN AMPLIFICATION
6-PIN LEAD-LESS MINIMOLD (M16, 1208 PACKAGE)
FEATURES
• Ideal for low noise, high-gain amplification
NF = 0.9 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz
• Maximum stable power gain: MSG = 20.0 dB TYP. @ VCE = 2 V, IC = 20 mA, f = 2 GHz
• SiGe technology (fT = 60 GHz, fmax = 60 GHz)
• 6-pin lead-less minimold (M16, 1208 package)
ORDERING INFORMATION
Part Number
2SC5843
2SC5843-T3
Quantity
50 pcs (Non reel)
10 kpcs/reel
Supplying Form
• 8 mm wide embossed taping
• Pin 1 (Collector), Pin 6 (Emitter) face the perforation side of the tape
Remark To order evaluation samples, contact your nearby sales office.
The unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS (TA = +25°C)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
P Note
tot
Tj
Tstg
Ratings
8.0
2.3
1.2
35
80
150
65 to +150
Note Mounted on 1.08 cm2 × 1.0 mm (t) glass epoxy PCB
Unit
V
V
V
mA
mW
°C
°C
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
Document No. PU10353EJ02V0DS (2nd edition)
Date Published September 2003 CP(K)
Printed in Japan
The mark  shows major revised points.
NEC Compound Semiconductor Devices 2003

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