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PDF 1N6318US Data sheet ( Hoja de datos )
| Número de pieza | 1N6318US | |
| Descripción | 500 mW ZENER DIODES | |
| Fabricantes | Compensated Deuices Incorporated | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de 1N6318US (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
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• AVAILABLE IN JAN, JANTX, JANTXV AND JANS
PER MIL-PRF-19500/533
• 500 mW ZENER DIODES
• NON CAVITY CONSTRUCTION
• METALLURGICALLY BONDED
1N6309US
THRU
1N6320US
MAXIMUM RATINGS
Operating Temperature: -65°C to +175°C
Storage Temperature: -65°C to +175°C
Power Dissapation: 500 mW@TEC=+125ºC
Power Derating: 10 mW/°C above TEC=+125ºC
Forward Voltage: 1.4V dc @ IF=1A dc (pulsed)
ELECTRICAL CHARACTERISTICS @ 25°C, unless otherwise specified
TYPE
1N6309US
1N6310US
1N6311US
1N6312US
1N6313US
1N6314US
1N6315US
1N6316US
1N6317US
1N6318US
1N6319US
1N6320US
VZ2
NOM.
±5% @
IZ2
VOLTS
2.4
2.7
3.0
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.2
6.8
VZ1
MIN.
@IZ1
250µ A
VOLTS
1.1
1.2
1.3
1.5
1.8
2.0
2.4
2.8
3.3
4.3
5.2
6.0
IZ2
TEST
CURRENT
ZZ
@
IZ2
mA OHMS
20 30
20 30
20 29
20 24
20 22
20 20
20 18
20 16
20 14
20 8.0
20 3.0
20 3.0
ZZK IZM VZ (reg) IZSM VR
@ SURGE
IR1 IR2
ND
@ @ @250 µA
250µ A
v VZ
25ºC TA= 1-3 kHz
(1) 150ºC
OHMS mA VOLTS AMPS VOLTS µ A µ A µ V/ Hz
1200
1300
1400
1400
177
157
141
128
1.5
1.5
1.5
1.6
2.5 1.0 100 200 1.0
2.2 1.0 60 150 1.0
2.0 1.0 30 100 1.0
1.8 1.0 5.0 20 1.0
1400
1700
1400
1500
117
108
99
90
1.6
1.6
0.9
0.5
1.65 1.0 3.0 12
1.5 1.0 2.0 12
1.4 1.0 2.0 12
1.27 1.5 5.0 12
1.0
1.0
1.0
1.0
1300
1200
800
400
83
76
68
63
0.4 1.17 2.0 5.0 12
0.4 1.10 2.5 5.0 10
0.3 0.97 3.5 5.0 10
0.35 1.23 4.0 2.0 50
1.0
2.0
5.0
5.0
NOTE 1: v VZ = VZ @ 20 mAdc minus VZ @ 2mAdc
MILLIMETERS
DIM MIN MAX
D 1.78 2.16
F 0.48 0.71
G 4.19 4.95
S 0.08MIN.
INCHES
MIN MAX
0.070 0.085
0.019 0.028
0.165 0.195
0.003MIN.
FIGURE 1
DESIGN DATA
CASE: D-5D, Hermetically sealed glass
case, per MIL-PRF- 19500/533
LEAD FINISH: Tin / Lead
THERMAL RESISTANCE: (ROJEC):
50 ˚C/W maximum
THERMAL IMPEDANCE: (ZOJX): 15
˚C/W maximum
POLARITY: Diode to be operated with
the banded (cathode) end positive.
MOUNTING SURFACE SELECTION:
The Axial Coefficient of Expansion
(COE) of this device is approximately
+ 4PPM / °C. The COE of the Mounting
Surface System should be selected to
provide a suitable match with this
device.
22 COREY STREET, MELROSE, MASSACHUSETTS 02176
PHONE (781) 665-1071
FAX (781) 665-7379
WEBSITE: http://www.cdi-diodes.com E-mail: [email protected]
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet 1N6318US.PDF ] | |
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