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IRFS4321-7PPbF の電気的特性と機能

IRFS4321-7PPbFのメーカーはInternational Rectifierです、この部品の機能は「Power MOSFET ( Transistor )」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRFS4321-7PPbF
部品説明 Power MOSFET ( Transistor )
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




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IRFS4321-7PPbF Datasheet, IRFS4321-7PPbF PDF,ピン配置, 機能
Application
Motion Control Applications
High Efficiency Synchronous Rectification in SMPS
Uninterruptible Power Supply
Hard Switched and High Frequency Circuits
Benefits
Low Rdson Reduces Losses
Low Gate Charge Improves the Switching Performance
Improved Diode Recovery Improves Switching &
EMI Performance
30V Gate Voltage Rating Improves Robustness
Fully Characterized Avalanche SOA
IRFS4321-7PPbF
 
G
D
S
HEXFET® Power MOSFET
VDSS
RDS(on) typ.
max
ID
150V
11.7m
14.7m
86A
G
Gate
D2Pak 7Pin
D
Drain
S
Source
Base part number Package Type
IRFS4321-7PPbF D2Pak-7Pin
Standard Pack
Form
Quantity
Tube
50
Tape and Reel Left
800
Orderable Part Number
IRFS4321-7PPbF
IRFS4321TRL7PP
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS (Thermally limited)
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy 
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Thermal Resistance  
Parameter
RJC
Junction-to-Case 
RJA Junction-to-Ambient
Max.
86
61
343
350
2.3
± 30
120
-55 to + 175  
300
Units
A
W
W/°C
V
mJ
°C  
Typ.
–––
–––
Max.
0.43*
40
Units
°C/W
 
RJC (end of life) for D2Pak and TO-262 = 0.65°C/W. This is the maximum measured value after 1000 temperature
cycles from -55 to 150°C and is accounted for by the physical wear out of the die attach medium.
Notes through are on page 2
1 www.irf.com © 2013 International Rectifier
June 14, 2013

1 Page





IRFS4321-7PPbF pdf, ピン配列
 
1000
100
10
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.5V
6.0V
5.5V
5.0V
1
0.1
0.1
5.0V
60µs PULSE WIDTH
Tj = 25°C
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 1. Typical Output Characteristics
1000
100
TJ = 175°C
10
1
0.1
3.0
TJ = 25°C
VDS = 25V
60µs PULSE WIDTH
4.0 5.0 6.0 7.0 8.0
VGS, Gate-to-Source Voltage (V)
9.0
1000
100
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.5V
6.0V
5.5V
5.0V
IRFS4321-7PPbF
10 5.0V
1
0.1
60µs PULSE WIDTH
Tj = 175°C
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 2. Typical Output Characteristics
3.5
ID = 50A
3.0 VGS = 10V
2.5
2.0
1.5
1.0
0.5
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
TJ , Junction Temperature (°C)
Fig 3. Typical Transfer Characteristics
7000
6000
5000
4000
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
Fig 4. Normalized On-Resistance vs. Temperature
20
ID= 50A
16
VDS= 120V
VDS= 75V
VDS= 30V
12
3000
2000
Coss
1000
0
1
Crss
10
VDS, Drain-to-Source Voltage (V)
100
8
4
0
0 20 40 60 80 100 120
QG Total Gate Charge (nC)
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
3 www.irf.com © 2013 International Rectifier
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
June 14, 2013


3Pages


IRFS4321-7PPbF 電子部品, 半導体
 
6.0
5.0
4.0
ID = 1.0A
ID = 1.0mA
ID = 250µA
3.0
2.0
1.0
-75 -50 -25 0 25 50 75 100 125 150 175
TJ , Temperature ( °C )
IRFS4321-7PPbF
40
30
20
10
IF = 33A
VR = 128V
TJ = 125°C
TJ = 25°C
0
100 200 300 400 500 600 700 800 900 1000
dif / dt - (A / µs)
Fig 16. Threshold Voltage vs. Temperature
Fig 17. Typical Recovery Current vs. dif/dt
40
30
20
10
IF = 50A
VR = 128V
TJ = 125°C
TJ = 25°C
0
100 200 300 400 500 600 700 800 900 1000
dif / dt - (A / µs)
3200
2800
2400
2000
1600
1200
800
IF = 33A
VR = 128V
400 TJ = 125°C
TJ = 25°C
0
100 200 300 400 500 600 700 800 900 1000
dif / dt - (A / µs)
Fig 18. Typical Recovery Current vs. dif/dt
3200
Fig 19. Typical Stored Charge vs. dif/dt
2800
2400
2000
1600
1200
800
IF = 50A
VR = 128V
400 TJ = 125°C
TJ = 25°C
0
100 200 300 400 500 600 700 800 900 1000
dif / dt - (A / µs)
6 www.irf.com
Fig 20. Typical Stored Charge vs. dif/dt
© 2013 International Rectifier
June 14, 2013

6 Page



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部品番号部品説明メーカ
IRFS4321-7PPbF

Power MOSFET ( Transistor )

International Rectifier
International Rectifier


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