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Datasheet E30A23VPS Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category
1E30A23VPSSTACK SILICON DIFFUSED DIODE (ALTERNATOR DIODE FOR AUTOMOTIVE)

SEMICONDUCTOR TECHNICAL DATA ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION. E30A23VPS, E30A23VPR STACK SILICON DIFFUSED DIODE F2 D FEATURES Average Forward Current : IO=30A. Zener Voltage : 23V(Typ.) F1 E POLARITY E30A23VPS (+ Type) E30A23VPR G (- Type) A MAXIMUM RATING (Ta=25 CHARACTERISTIC Av
KEC(Korea Electronics)
KEC(Korea Electronics)
diode
2E30A23VPSSTACK SILICON DIFFUSED DIODE

SEMICONDUCTOR TECHNICAL DATA ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION. E30A23VPS, E30A23VPR STACK SILICON DIFFUSED DIODE D F2 FEATURES Average Forward Current : IO=30A. Zener Voltage : 23V(Typ.) POLARITY E30A23VPS (+ Type) E30A23VPR (- Type) MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL A
KEC
KEC
diode


E30 Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes Catagory
1E30Miniature LEDs

A Miniature LEDs (2.0mm Diameter) Line No. Part No. E3 E5 Lens Translucent Translucent Luminous Intensity at 20mA Minimum Typical 0.5mcd 0.5mcd 3.0mcd 3.0mcd Viewing Angle 2θ ½ 45° 45° Forward Voltage at 20mA Typical Maximum 2.1V 2.1V 2.7V 2.7V Peak Wave Length at 20mA 700nm 560nm Drawing A A
Gilway Technical Lamp
Gilway Technical Lamp
led
2E301Diode, Rectifier

American Microsemiconductor
American Microsemiconductor
diode
3E304-12VT-1 and T-1 3/4/ Infrared LEDs

A B 2 7 MI N 1.5 2.54 .5 1 MAX CATHODE 8.6 1 5 5.9 T-1 and T-1¾, Infrared LEDs: 880nm, 940nm Line Part No. No. Size T-1 T-1 T-1¾ T-1¾ Lens Clear Trans.Blue Clear Trans.Blue Radiant Power at 20mA Minimum Typical 2.0mW/sr 2.0mW/sr 8.0mW/sr 5.0mW/sr 10.0mW/sr 4.0mW/sr 20.0mW/sr 20.0mW/sr Vewing
Gilway Technical Lamp
Gilway Technical Lamp
led
4E304-5VT-1 and T-1 3/4/ Infrared LEDs

A B 2 7 MI N 1.5 2.54 .5 1 MAX CATHODE 8.6 1 5 5.9 T-1 and T-1¾, Infrared LEDs: 880nm, 940nm Line Part No. No. Size T-1 T-1 T-1¾ T-1¾ Lens Clear Trans.Blue Clear Trans.Blue Radiant Power at 20mA Minimum Typical 2.0mW/sr 2.0mW/sr 8.0mW/sr 5.0mW/sr 10.0mW/sr 4.0mW/sr 20.0mW/sr 20.0mW/sr Vewing
Gilway Technical Lamp
Gilway Technical Lamp
led
5E3055TMJE3055T

MJE3055T/MJE2955T GENERAL DESCRIPTION Complementary, high power transistors in a plastic envelope, primarily for use in audio and general purpose SILICON EPITAXIAL PLANAR TRANSISTOR QUICK REFERENCE DATA SYMBOL TO-220 CONDITIONS VBE = 0V MIN MAX 70 60 10 75 1.2 2.0 UNIT V V A
ETC
ETC
data
6E30A23VPRSTACK SILICON DIFFUSED DIODE (ALTERNATOR DIODE FOR AUTOMOTIVE)

SEMICONDUCTOR TECHNICAL DATA ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION. E30A23VPS, E30A23VPR STACK SILICON DIFFUSED DIODE F2 D FEATURES Average Forward Current : IO=30A. Zener Voltage : 23V(Typ.) F1 E POLARITY E30A23VPS (+ Type) E30A23VPR G (- Type) A MAXIMUM RATING (Ta=25 CHARACTERISTIC Av
KEC(Korea Electronics)
KEC(Korea Electronics)
diode
7E30A23VPRSTACK SILICON DIFFUSED DIODE

SEMICONDUCTOR TECHNICAL DATA ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION. E30A23VPS, E30A23VPR STACK SILICON DIFFUSED DIODE D F2 FEATURES Average Forward Current : IO=30A. Zener Voltage : 23V(Typ.) POLARITY E30A23VPS (+ Type) E30A23VPR (- Type) MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL A
KEC
KEC
diode



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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

Sanken
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