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PDF CXDM1002N Data sheet ( Hoja de datos )
| Número de pieza | CXDM1002N | |
| Descripción | SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET | |
| Fabricantes | Central Semiconductor | |
| Logotipo |  |
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CXDM1002N
SURFACE MOUNT SILICON
N-CHANNEL
ENHANCEMENT-MODE
MOSFET
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CXDM1002N is
a high voltage silicon N-Channel enhancement-mode
MOSFET designed for high speed pulsed amplifier and
driver applications. This MOSFET offers high voltage,
low rDS(ON), low threshold voltage, and low leakage
current.
MARKING: FULL PART NUMBER
SOT-89 CASE
APPLICATIONS:
• Load/Power switches
• Power supply converter circuits
• Battery powered portable equipment
FEATURES:
• Low rDS(ON) (140mΩ TYP @ VGS=4.5V)
• High voltage (VDS=100V)
• Logic level compatibility
• 2kV ESD protection
MAXIMUM RATINGS: (TA=25°C)
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Steady State)
Maximum Pulsed Drain Current, tp=10μs
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VDS
VGS
ID
IDM
PD
TJ, Tstg
ΘJA
100
20
2.0
7.0
1.2
-55 to +150
104
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN TYP
IGSSF, IGSSR VGS=20V, VDS=0
IDSS
VDS=100V, VGS=0
BVDSS
VGS=0, ID=250μA
100
VGS(th)
VGS=VDS, ID=250μA
1.5 2.1
VSD
VGS=0, IS=1.0A
rDS(ON)
VGS=10V, ID=2.0A
125
rDS(ON)
VGS=4.5V, ID=1.0A
140
Crss
VDS=25V, VGS=0, f=1.0MHz
48
Ciss VDS=25V, VGS=0, f=1.0MHz
550
Coss
VDS=25V, VGS=0, f=1.0MHz
45
Qg(tot)
VDS=80V, VGS=5.0V, ID=2.0A
6.0
Qgs VDS=80V, VGS=5.0V, ID=2.0A
1.2
Qgd VDS=80V, VGS=5.0V, ID=2.0A
3.0
ton VDD=50V, VGS=5.0V, ID=3.5A
32
toff RG=4.7Ω
50
MAX
100
100
2.5
1.1
300
350
UNITS
V
V
A
A
W
°C
°C/W
UNITS
nA
nA
V
V
V
mΩ
mΩ
pF
pF
pF
nC
nC
nC
ns
ns
R1 (19-March 2013)
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet CXDM1002N.PDF ] | |
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