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Datasheet C5127A PDF ( 特性, スペック, ピン接続図 )

部品番号 C5127A
部品説明 2SC5127A
メーカ Panasonic
ロゴ Panasonic ロゴ 
プレビュー
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C5127A Datasheet, C5127A PDF,ピン配置, 機能
Power Transistors
2SC5127, 2SC5127A
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
s Features
q High-speed switching
q High collector to base voltage VCBO
q Wide area of safe operation (ASO)
q Full-pack package with outstanding insulation, which can be in-
stalled to the heat sink with one screw
s Absolute Maximum Ratings (TC=25˚C)
Parameter
Symbol
Ratings
Collector to 2SC5127
base voltage 2SC5127A
VCBO
800
900
Collector to 2SC5127
emitter voltage 2SC5127A
VCES
800
900
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power TC=25°C
dissipation
Ta=25°C
VCEO
VEBO
ICP
IC
IB
PC
500
8
3.0
1.5
0.5
25
2
Junction temperature
Storage temperature
Tj 150
Tstg –55 to +150
Unit
V
V
V
V
A
A
A
W
˚C
˚C
9.9±0.3
φ3.2±0.1
Unit: mm
4.6±0.2
2.9±0.2
1.2±0.15
1.45±0.15
2.6±0.1
0.7±0.1
0.75±0.1
2.54±0.2
5.08±0.4
7° 1 2 3
1:Base
2:Collector
3:Emitter
TO–220E Full Pack Package
s Electrical Characteristics (TC=25˚C)
Parameter
Symbol
Conditions
min typ max Unit
Collector cutoff
2SC5127
current
2SC5127A
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
ICBO
IEBO
VCEO
hFE1
hFE2
VCE(sat)
VBE(sat)
fT
ton
tstg
tf
VCB = 800V, IE = 0
VCB = 900V, IE = 0
100
µA
100
VEB = 5V, IC = 0
100 µA
IC = 10mA, IB = 0
500
V
VCE = 5V, IC = 0.1A
15
VCE = 5V, IC = 0.6A
8
IC = 0.6A, IB = 0.17A
1.0 V
IC = 0.6A, IB = 0.17A
1.5 V
VCE = 10V, IC = 0.1A, f = 1MHz
20 MHz
IC = 0.6A, IB1 = 0.17A, IB2 = – 0.34A,
VCC = 200V
1.0 µs
3.0 µs
0.3 µs
1

1 Page



C5127A pdf, ピン配列
Power Transistors
2SC5127/2SC5127A
Area of safe operation, reverse bias ASO
4.0
Lcoil=180µH
3.5
IC/IB=5
(IB1=–IB2)
TC<100˚C
3.0
2.5
2.0
1.5
1.0
0.5
0
0 100 200 300 400 500 600 700 800
Collector to emitter voltage VCE (V)
Reverse bias ASO measuring circuit
T.U.T
IB1
IC
Vin –IB2
tW
L coil
VCC
Vclamp
10000
1000
Rth(t) — t
Note: Rth was measured at Ta=25˚C and under natural convection.
(1) PT=10V × 0.2A (2W) and without heat sink
(2) PT=10V × 1.0A (10W) and with a 100 × 100 × 2mm Al heat sink
100 (1)
(2)
10
1
0.1
10–4
10–3
10–2
10–1
1
10
Time t (s)
102 103
104
3


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