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MDF5N50 の電気的特性と機能

MDF5N50のメーカーはMagnaChipです、この部品の機能は「N-Channel MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 MDF5N50
部品説明 N-Channel MOSFET
メーカ MagnaChip
ロゴ MagnaChip ロゴ 




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MDF5N50 Datasheet, MDF5N50 PDF,ピン配置, 機能
MDF5N50
N-Channel MOSFET 500V, 5.0 A, 1.4
General Description
The MDF5N50 uses advanced MagnaChip’s MOSFET
Technology, which provides low on-state resistance, high
switching performance and excellent quality.
MDF5N50 is suitable device for SMPS, high Speed switching
and general purpose applications.
Features
VDS = 500V
ID = 5.0A
RDS(ON) 1.4Ω
Applications
Power Supply
PFC
Ballast
@ VGS = 10V
@ VGS = 10V
G DS
Absolute Maximum Ratings (Ta = 25oC)
Characteristics
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current ()
Pulsed Drain Current(1)
Power Dissipation
Peak Diode Recovery dv/dt(3)
Single Pulse Avalanche Energy(4)
Junction and Storage Temperature Range
Id limited by maximum junction temperature
Thermal Characteristics
Characteristics
Thermal Resistance, Junction-to-Ambient(1)
Thermal Resistance, Junction-to-Case(1)
TC=25oC
TC=100oC
TC=25oC
Derate above 25 oC
Symbol
VDSS
VGSS
ID
IDM
PD
Dv/dt
EAS
TJ, Tstg
Rating
500
±30
5.0
3.2
20
27
0.22
4.5
230
-55~150
Unit
V
V
A
A
A
W
W/ oC
V/ns
mJ
oC
Symbol
RθJA
RθJC
Rating
62.5
4.6
Unit
oC/W
Oct 2014. Version 1.3
1 MagnaChip Semiconductor Ltd.

1 Page





MDF5N50 pdf, ピン配列
Vgs=5.5V
=6.0V
10 =6.5V
=7.0V
=8.0V
=10.0V
1
Notes
1. 250Pulse Test
2. T =25
C
0.1
0.1 1 10
V ,Drain-Source Voltage [V]
DS
Fig.1 On-Region Characteristics
1.8
Notes :
1. V = 10 V
1.6
GS
2. I = 5 A
D
1.4
1.2
1.0
VGS=10V
V =4.5V
GS
0.8
0.6
-50
-25
0 25 50 75 100
T , Junction Temperature [oC]
J
125
Fig.3 On-Resistance Variation with
Temperature
150
2.4
2.3
2.2
2.1
2.0
1.9
1.8
1.7
1.6
VGS=10.0V
VGS=20V
1.5
1.4
1.3
1.2
1.1
1.0
0 5 10 15 20
ID,Drain Current [A]
Fig.2 On-Resistance Variation with
Drain Current and Gate Voltage
25
1.2
Notes :
1. V = 0 V
GS
2. I = 250
D
1.1
1.0
0.9
0.8
-50
0 50 100 150
T , Junction Temperature [oC]
J
200
Fig.4 Breakdown Voltage Variation vs.
Temperature
* Notes ;
1. VDS=30V
10
150
25
-55
1
4567
VGS [V]
Fig.5 Transfer Characteristics
8
Oct 2014. Version 1.3
3
100
Notes :
1. VGS = 0 V
2. ID = 250
10
1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
VSD, Source-Drain Voltage [V]
Fig.6 Body Diode Forward Voltage
Variation with Source Current and
Temperature
MagnaChip Semiconductor Ltd.


3Pages


MDF5N50 電子部品, 半導体
DISCLAIMER:
The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power
generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be
expected to result in a personal injury. Seller’s customers using or selling Seller’s products for use in such
applications do so at their own risk and agree to fully defend and indemnify Seller.
MagnaChip reserves the right to change the specifications and circuitry without notice at any time. MagnaChip does not consider responsibility
for use of any circuitry other than circuitry entirely included in a MagnaChip product.
is a registered trademark of MagnaChip
Semiconductor Ltd.
Oct 2014. Version 1.3
6 MagnaChip Semiconductor Ltd.

6 Page



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共有リンク

Link :


部品番号部品説明メーカ
MDF5N50

N-Channel MOSFET

MagnaChip
MagnaChip
MDF5N50B

N-Channel MOSFET

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MDF5N50F

N-Channel MOSFET

MagnaChip
MagnaChip
MDF5N50FB

N-Channel Trench MOSFET

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MagnaChip


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