STI55NF03L Datasheet PDF - STMicroelectronics
| Part Number | STI55NF03L | |
| Description | N-channel Power MOSFET | |
| Manufacturers | STMicroelectronics | |
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STI55NF03L
N-channel 30 V, 0.01 Ω, 55 A, I²PAK
STripFET™ II Power MOSFET
Features
Type
STI55NF03L
VDSS
30 V
RDS(on) max
< 0.013 Ω
ID
55 A
■ Optimized for high switching operation
■ Low gate charge
■ Logic level gate drive
Application
■ Switching applications
– Automotive
Description
This Power MOSFET is the latest development of
STMicroelectronics unique “single feature size”
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps allowing remarkable
manufacturing reproducibility.
123
I²PAK
Figure 1. Internal schematic diagram
$ 4!" OR
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Table 1. Device summary
Order code
STI55NF03L
Marking
55NF03L
3
!-V
Package
I²PAK
Packaging
Tube
May 2011
Doc ID 018838 Rev 1
1/12
www.st.com
12
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STI55NF03L
Electrical characteristics
Table 6.
Symbol
Switching times
Parameter
td(on)
tr
Turn-on delay time
Rise time
td(off)
tf
Turn-off-delay time
Fall time
Test conditions
VDD = 15 V, ID = 27.5 A
RG = 4.7 Ω VGS = 10 V
(see Figure 13)
VDD = 15 V, ID = 27.5 A
RG = 4.7 Ω, VGS = 10 V
(see Figure 13)
Min. Typ. Max. Unit
28 ns
400 ns
25 ns
50 ns
Table 7.
Symbol
Source drain diode
Parameter
Test conditions
ISD
ISDM (1)
VSD (2)
Source-drain current
Source-drain current
(pulsed)
Forward on voltage
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 55 A, VGS = 0
ISD = 55 A, VDD = 30 V
di/dt = 100 A/µs,
Tj = 150 °C
(see Figure 15)
1. Pulse width limited by safe operating area.
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Min. Typ. Max Unit
55 A
220 A
1.3 V
70 ns
160 nC
4.5 A
Doc ID 018838 Rev 1
5/12
Preview 5 Page |
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| Information | Total 12 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ STI55NF03L.PDF Datasheet ] | |
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