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PDF STFI24N60M2 Data sheet ( Hoja de datos )
| Número de pieza | STFI24N60M2 | |
| Descripción | N-channel Power MOSFET | |
| Fabricantes | STMicroelectronics | |
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STF24N60M2, STFI24N60M2
N-channel 600 V, 0.168 Ω typ., 18 A MDmesh II Plus™ low Qg
Power MOSFET in TO-220FP and I2PAKFP packages
Datasheet − production data
Features
3
2
1
TO-220FP
123
I2PAKFP
(TO-281)
Figure 1. Internal schematic diagram
D(2)
G(1)
S(3)
AM01476v1
Order codes
STF24N60M2
STFI24N60M2
VDS @ TJmax
650 V
RDS(on) max ID
0.19 Ω 18 A
• Extremely low gate charge
• Lower RDS(on) x area vs previous generation
• Low gate input resistance
• 100% avalanche tested
• Zener-protected
Applications
• Switching applications
• LLC converters, resonant converters
Description
These devices are N-channel Power MOSFETs
developed using a new generation of MDmesh™
technology: MDmesh II Plus™ low Qg. These
revolutionary Power MOSFETs associate a
vertical structure to the company's strip layout to
yield one of the world's lowest on-resistance and
gate charge. They are therefore suitable for the
most demanding high efficiency converters.
Order codes
STF24N60M2
STFI24N60M2
Table 1. Device summary
Marking
Package
24N60M2
TO-220FP
I2PAKFP (TO-281)
Packaging
Tube
May 2013
This is information on a product in full production.
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1 page  
STF24N60M2, STFI24N60M2
Electrical characteristics
Symbol
Parameter
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Table 7. Switching times
Test conditions
VDD = 300 V, ID = 9 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 14 and 19)
Min. Typ. Max. Unit
- 14 - ns
- 9 - ns
- 60 - ns
- 15 - ns
Table 8. Source drain diode
Symbol
Parameter
Test conditions
ISD(1) Source-drain current
ISDM (1),(2) Source-drain current (pulsed)
VSD (3) Forward on voltage
ISD = 18 A, VGS = 0
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 18 A, di/dt = 100 A/µs
VDD = 60 V (see Figure 16)
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 18 A, di/dt = 100 A/µs
VDD = 60 V, Tj = 150 °C
(see Figure 16)
1. The value is rated according to Rthj-case and limited by package.
2. Pulse width limited by safe operating area
3. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Min. Typ. Max. Unit
- 18 A
- 72 A
- 1.6 V
- 332
ns
-4
µC
- 24
A
- 450
ns
- 5.5
µC
- 25
A
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STF24N60M2, STFI24N60M2
Package mechanical data
Figure 20. TO-220FP drawing
DocID024026 Rev 4
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| Páginas | Total 14 Páginas | |
| PDF Descargar | [ Datasheet STFI24N60M2.PDF ] | |
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