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STFI24NM60NのメーカーはSTMicroelectronicsです、この部品の機能は「N-channel Power MOSFET」です。 |
部品番号 | STFI24NM60N |
| |
部品説明 | N-channel Power MOSFET | ||
メーカ | STMicroelectronics | ||
ロゴ | |||
このページの下部にプレビューとSTFI24NM60Nダウンロード(pdfファイル)リンクがあります。 Total 12 pages
STFI24NM60N
N-channel 600 V, 0.168 Ω typ., 17 A MDmesh™ II Power MOSFET
in a I²PAKFP package
Datasheet − production data
Features
1 23
I2PAKFP
(TO-281)
Figure 1. Internal schematic diagram
Order codes VDS @Tjmax RDS(on) max. ID
STFI24NM60N 650 V
0.19 Ω
17 A
• Fully insulated and low profile package with
increased creepage path from pin to heatsink
plate
• 100% avalanche tested
• Low input capacitance and gate charge
• Low gate input resistance
Applications
• Switching applications
'
*
6
Description
This device is an N-channel Power MOSFET
developed using the second generation of
MDmesh™ technology. This revolutionary Power
MOSFET associates a vertical structure to the
company’s strip layout to yield one of the world’s
lowest on-resistance and gate charge. It is
therefore suitable for the most demanding high
efficiency converters.
$0Y
Order code
STFI24NM60N
Table 1. Device summary
Marking
Packages
24NM60N
I2PAKFP (TO-281)
Packaging
Tube
July 2014
This is information on a product in full production.
DocID022440 Rev 3
1/12
www.st.com
1 Page STFI24NM60N
1 Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
Value
VGS
ID
ID
IDM (2)
PTOT
dv/dt(3)
Gate- source voltage
Drain current (continuous) at TC = 25 °C
Drain current (continuous) at
TC = 100 °C
Drain current (pulsed)
Total dissipation at TC = 25 °C
Peak diode recovery voltage slope
± 30
17(1)
11(1)
68(1)
30
15
VISO
TJ
Tstg
Insulation withstand voltage (RMS) from
all three leads to external heat sink
(t=1 s; TC=25 °C)
Operating junction temperature
Storage temperature
2500
-55 to 150
1. Limited by maximum junction temperature.
2. Pulse width limited by safe operating area.
3. ISD ≤ 17 A, di/dt ≤ 400 A/µs, peak VDS ≤ V(BR)DSS, VDD = 80% V(BR)DSS
Symbol
Table 3. Thermal data
Parameter
Rthj-case Thermal resistance junction-case max.
Rthj-amb
Thermal resistance junction-ambient
max.
Value
4.17
62.5
Table 4. Avalanche characteristics
Symbol
Parameter
Value
IAR
Avalanche current, repetitive or not-
repetitive (pulse width limited by TJ max)
Single pulse avalanche energy
EAS (starting TJ = 25 °C, ID = IAR, VDD = 50 V)
6
300
Unit
V
A
A
A
W
V/ns
V
°C
Unit
°C/W
°C/W
Unit
A
mJ
DocID022440 Rev 3
3/12
12
3Pages Electrical characteristics
STFI24NM60N
2.1 Electrical characteristics (curves)
Figure 2. Safe operating area
ID AM07975v1
(A)
Figure 3. Thermal impedance
10
1
0.1
0.01
0.1
Tj=150°C
Tc=25°C
Sinlge
pulse
1 10
10µs
100µs
1ms
10ms
100 VDS(V)
Figure 4. Output characteristics
ID
(A) VGS = 10 V
40
AM07977v1
VGS = 7 V
30
VGS = 6 V
20
Figure 5. Transfer characteristics
ID (A)
AM07978v1
40
VDS= 20 V
30
20
10
VGS = 5 V
0
0 5 10 15 20 25 VDS(V)
Figure 6. Gate charge vs gate-source voltage
VGS
(V)
12
VDS
10
VDD=480V
ID= 17A
AM07979v1
VDS
(V)
500
400
8
300
6
200
4
100
2
00
0 10 20 30 40 50 Qg(nC)
10
0
0 2 4 6 8 10 VGS(V)
Figure 7. Static drain-source on-resistance
RDS(on)
(Ω)
0.176
0.174
VGS=10V
AM08534v1
0.172
0.170
0.168
0.166
0.164
0.162
0.160
0.158
0 5 10 15 ID(A)
6/12 DocID022440 Rev 3
6 Page | |||
ページ | 合計 : 12 ページ | ||
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部品番号 | 部品説明 | メーカ |
STFI24NM60N | N-channel Power MOSFET | STMicroelectronics |