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PDF STB80NF55-06T Data sheet ( Hoja de datos )
| Número de pieza | STB80NF55-06T | |
| Descripción | N-CHANNEL POWER MOSFET | |
| Fabricantes | STMicroelectronics | |
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STB80NF55-06T
N-channel 55 V, 5 mΩ, 80 A STripFET™ II Power MOSFET
in a D²PAK package
Features
Order code
STB80NF55-06T
VDSS
55 V
RDS(on) max.
< 6.5 mΩ
ID
80A
■ Exceptional dv/dt capability
Applications
■ Switching application
■ Automotive
Description
This Power MOSFET has been developed using
STMicroelectronics’ unique STripFET process,
which is specifically designed to minimize input
capacitance and gate charge. This renders the
device suitable for use as primary switch in
advanced high-efficiency isolated DC-DC
converters for telecom and computer applications,
and applications with low gate charge driving
requirements.
TAB
3
1
D²PAK
Figure 1. Internal schematic diagram
$ 4!" OR
'
Table 1. Device summary
Order code
Marking
STB80NF55-06T
B80NF55-06T
Package
D²PAK
3
!-V
Packaging
Tape and reel
January 2012
Doc ID 022702 Rev 1
1/15
www.st.com
15
1 page  
STB80NF55-06T
Electrical characteristics
Table 6. Source drain diode
Symbol
Parameter
Test conditions
ISD
ISDM (1)
VSD (2)
trr
Qrr
IRRM
Source-drain current
Source-drain current
(pulsed)
Forward on voltage
ISD = 80 A, VGS = 0
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 80 A,
di/dt = 100 A/µs,
VDD = 35 V, Tj = 150 °C
(see Figure 15)
1. Pulse width limited by safe operating area.
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
Min. Typ. Max. Unit
80 A
-
320 A
- 1.5 V
100
- 0.32
6.5
ns
nC
A
Doc ID 022702 Rev 1
5/15
5 Page 
STB80NF55-06T
Figure 19. D²PAK (TO-263) drawing
Package mechanical data
Figure 20. D²PAK footprint(a)
16.90
0079457_S
12.20
1.60
5.08
9.75
3.50
a. All dimensions are in millimeters
Doc ID 022702 Rev 1
Footprint
11/15
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| Páginas | Total 15 Páginas | |
| PDF Descargar | [ Datasheet STB80NF55-06T.PDF ] | |
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